Plasmonic Antireflection Coating for Photoconductive Terahertz Generation

Plasmon-enhanced photoconductive antennas allow for improved performance, particularly in below-band-gap absorption devices using low-temperature-grown GaAs. Here we design the plasmonic nanostructures to act as antireflection coatings as well, achieving below 10% reflection at 1570 nm wavelength in...

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Veröffentlicht in:ACS photonics 2017-06, Vol.4 (6), p.1350-1354
Hauptverfasser: Fesharaki, Faezeh, Jooshesh, Afshin, Bahrami-Yekta, Vahid, Mahtab, Mahsa, Tiedje, Tom, Darcie, Thomas E, Gordon, Reuven
Format: Artikel
Sprache:eng
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Zusammenfassung:Plasmon-enhanced photoconductive antennas allow for improved performance, particularly in below-band-gap absorption devices using low-temperature-grown GaAs. Here we design the plasmonic nanostructures to act as antireflection coatings as well, achieving below 10% reflection at 1570 nm wavelength in an optimized device. Quantitative agreement is seen between experiment and theory. Terahertz emission field amplitudes demonstrate 18 times enhancement compared to that of a conventional terahertz photoconductive antenna on the same substrate.
ISSN:2330-4022
2330-4022
DOI:10.1021/acsphotonics.7b00410