Ultrasensitive Solar-Blind Phototransistor Based on ZnO/β-Ga 2 O 3 Heterojunctions Fabricated Via Zinc-Induced Low-Temperature Dual-Crystallization

Ultrasensitive Solar-Blind Phototransistor Based on ZnO/β-Ga 2 O 3 Heterojunctions Fabricated Via Zinc-Induced Low-Temperature Dual-Crystallization

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Veröffentlicht in:ACS photonics 2024-11
Hauptverfasser: Shi, Guanghai, Zhuang, Qiming, Liu, Yuhang, Xu, Jiao, Yun, Teng, Guo, Dengji, Wang, Xujin, Wu, Sudong
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container_title ACS photonics
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creator Shi, Guanghai
Zhuang, Qiming
Liu, Yuhang
Xu, Jiao
Yun, Teng
Guo, Dengji
Wang, Xujin
Wu, Sudong
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doi_str_mv 10.1021/acsphotonics.4c01487
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title Ultrasensitive Solar-Blind Phototransistor Based on ZnO/β-Ga 2 O 3 Heterojunctions Fabricated Via Zinc-Induced Low-Temperature Dual-Crystallization
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