Donor–Acceptor Conjugated Polymers for Single-Component Near-Infrared II Organic Phototransistors with Ultrahigh Photoresponsivity

The design of donor–acceptor (D–A) conjugated polymers with narrow bandgaps remains a big challenge for achieving high-performance near-infrared (NIR) phototransistors. Herein, we report a novel D–A conjugated polymer (denoted as TBOPV-DT) based on a thiophene-fused benzodifurandione-based oligo­(p-...

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Veröffentlicht in:ACS materials letters 2024-03, Vol.6 (3), p.1069-1076
Hauptverfasser: Huang, Ying, Xu, Yunqi, Liu, Kun, Fu, Yubin, Ricciardulli, Antonio Gaetano, Wang, Faxing, Yang, Sheng, Ma, Ji, Li, Mengmeng, Qian, Zhengfang, Wang, Renheng, Zhang, Panpan
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container_issue 3
container_start_page 1069
container_title ACS materials letters
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creator Huang, Ying
Xu, Yunqi
Liu, Kun
Fu, Yubin
Ricciardulli, Antonio Gaetano
Wang, Faxing
Yang, Sheng
Ma, Ji
Li, Mengmeng
Qian, Zhengfang
Wang, Renheng
Zhang, Panpan
description The design of donor–acceptor (D–A) conjugated polymers with narrow bandgaps remains a big challenge for achieving high-performance near-infrared (NIR) phototransistors. Herein, we report a novel D–A conjugated polymer (denoted as TBOPV-DT) based on a thiophene-fused benzodifurandione-based oligo­(p-phenylenevinylene) (TBOPV) acceptor in conjugation with a 3,3′-dialkoxy-2,2′-dithiophene (DT) donor. Benefiting from the alkoxylation of the donor units, the TBOPV-DT conjugated polymer exhibits broad second NIR absorption and a narrow bandgap of 0.65 eV. When being used as the channel material in field-effect transistors, the TBOPV-DT conjugated polymer shows p-type semiconducting behavior with a hole mobility of 0.16 cm2 V–1 s–1. Besides, the resulting single-component polymer phototransistor displays ultrahigh sensitivity to a broad range of wavelengths (850–1450 nm) and a record-high photoresponsivity of 1.9 × 105 A W–1. Moreover, the fast rise and decay response times of 53 and 317 ms, respectively, are comparable to those of state-of-the-art two-dimensional materials. This work sheds light on designing new narrow-bandgap D–A conjugated polymers with molecular precision and paves the way for the development of future high-performance optoelectronics.
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Herein, we report a novel D–A conjugated polymer (denoted as TBOPV-DT) based on a thiophene-fused benzodifurandione-based oligo­(p-phenylenevinylene) (TBOPV) acceptor in conjugation with a 3,3′-dialkoxy-2,2′-dithiophene (DT) donor. Benefiting from the alkoxylation of the donor units, the TBOPV-DT conjugated polymer exhibits broad second NIR absorption and a narrow bandgap of 0.65 eV. When being used as the channel material in field-effect transistors, the TBOPV-DT conjugated polymer shows p-type semiconducting behavior with a hole mobility of 0.16 cm2 V–1 s–1. Besides, the resulting single-component polymer phototransistor displays ultrahigh sensitivity to a broad range of wavelengths (850–1450 nm) and a record-high photoresponsivity of 1.9 × 105 A W–1. Moreover, the fast rise and decay response times of 53 and 317 ms, respectively, are comparable to those of state-of-the-art two-dimensional materials. 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Herein, we report a novel D–A conjugated polymer (denoted as TBOPV-DT) based on a thiophene-fused benzodifurandione-based oligo­(p-phenylenevinylene) (TBOPV) acceptor in conjugation with a 3,3′-dialkoxy-2,2′-dithiophene (DT) donor. Benefiting from the alkoxylation of the donor units, the TBOPV-DT conjugated polymer exhibits broad second NIR absorption and a narrow bandgap of 0.65 eV. When being used as the channel material in field-effect transistors, the TBOPV-DT conjugated polymer shows p-type semiconducting behavior with a hole mobility of 0.16 cm2 V–1 s–1. Besides, the resulting single-component polymer phototransistor displays ultrahigh sensitivity to a broad range of wavelengths (850–1450 nm) and a record-high photoresponsivity of 1.9 × 105 A W–1. Moreover, the fast rise and decay response times of 53 and 317 ms, respectively, are comparable to those of state-of-the-art two-dimensional materials. 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