Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC subs...

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Veröffentlicht in:	ACS applied nano materials 2019-02, Vol.2 (2), p.844-852
Hauptverfasser:	Momeni Pakdehi, D, Pierz, K, Wundrack, S, Aprojanz, J, Nguyen, T. T. N, Dziomba, T, Hohls, F, Bakin, A, Stosch, R, Tegenkamp, C, Ahlers, F. J, Schumacher, H. W
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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