Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors

We have previously shown that one-dimensional edge contact to two-dimensional heterostructure field effect transistors with a graphene channel, and hexagonal boron nitride, as both the substrate material and top encapsulated layer, show ultrahigh carrier mobility and ultralow carrier noise (low freq...

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Veröffentlicht in:	ACS applied nano materials 2024-05, Vol.7 (11), p.12366-12375
Hauptverfasser:	Behera, Aroop K., Harris, C. Thomas, Pete, Douglas V., Smyth, Christopher M., Muniz, Marta B., Koybasi, Ozhan, Taniguchi, Takashi, Watanabe, Kenji, Belle, Branson D., Das, Suprem R.
Format:	Artikel
Sprache:	eng
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