In-Column Backscattered Electron Microscopy for a Rapid Identification of the Number of Layers in MoS 2 Nanosheets: Implications for Electronic and Optoelectronic Devices

In-Column Backscattered Electron Microscopy for a Rapid Identification of the Number of Layers in MoS 2 Nanosheets: Implications for Electronic and Optoelectronic Devices

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Veröffentlicht in:ACS applied nano materials 2024-01, Vol.7 (1), p.153-162
Hauptverfasser: Sharbidre, Rakesh S., Narute, Prashant, Byen, Ji Cheol, Kim, Doyeon, Park, Jaesung, Park, Byong Chon, Hong, Seong-Gu
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container_title ACS applied nano materials
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creator Sharbidre, Rakesh S.
Narute, Prashant
Byen, Ji Cheol
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Park, Jaesung
Park, Byong Chon
Hong, Seong-Gu
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doi_str_mv 10.1021/acsanm.3c04029
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title In-Column Backscattered Electron Microscopy for a Rapid Identification of the Number of Layers in MoS 2 Nanosheets: Implications for Electronic and Optoelectronic Devices
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