Vertical Tip-to-Tip Interconnection p–n Silicon Nanowires for Plasmonic Hot Electron-Enhanced Broadband Photodetectors

A p–n junction photodetector, formed between the tip-to-tip interconnection of vertical silicon nanowire arrays, was fabricated by using a facile and economic process with remarkable performances. Through the steady trend of the current–voltage curve, it is proven that the reliable welding between p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ACS applied nano materials 2021-02, Vol.4 (2), p.1567-1575
Hauptverfasser:	Huang, Yuting, Liang, Haifeng, Zhang, Yingli, Yin, Shujing, Cai, Changlong, Liu, Weiguo, Jia, Tiantian
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!