Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed la...

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Veröffentlicht in:ACS applied materials & interfaces 2019-10, Vol.11 (40), p.37229-37238
Hauptverfasser: Van Daele, Michiel, Griffiths, Matthew B. E, Raza, Ali, Minjauw, Matthias M, Solano, Eduardo, Feng, Ji-Yu, Ramachandran, Ranjith K, Clemmen, Stéphane, Baets, Roel, Barry, Seán T, Detavernier, Christophe, Dendooven, Jolien
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container_issue 40
container_start_page 37229
container_title ACS applied materials & interfaces
container_volume 11
creator Van Daele, Michiel
Griffiths, Matthew B. E
Raza, Ali
Minjauw, Matthias M
Solano, Eduardo
Feng, Ji-Yu
Ramachandran, Ranjith K
Clemmen, Stéphane
Baets, Roel
Barry, Seán T
Detavernier, Christophe
Dendooven, Jolien
description A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (
doi_str_mv 10.1021/acsami.9b10848
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fullrecord <record><control><sourceid>acs_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acsami_9b10848</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>b682022678</sourcerecordid><originalsourceid>FETCH-LOGICAL-a347t-356aa4964e8b1e80400beace7fec2eb5cdd413bf40f132510e65c258531385e63</originalsourceid><addsrcrecordid>eNp1kM1Lw0AQxRdRsFavnvcspO5nujmWWqsQqkg8h8lmgilJNuwmh_73pqR48zTDzHuPx4-QR85WnAn-DDZAW6-SgjOjzBVZ8ESpyAgtrv92pW7JXQhHxmIpmF6Q7LOB0EK0636gs1jSzeDa2tIUTujpC_Yu1EPtOuoqeoDOhcGPdhj9pNy7pqQHBE-_nGtphm2PHs6_e3JTQRPw4TKX5Pt1l23fovRj_77dpBFItR4iqWMAlcQKTcHRMMVYgWBxXaEVWGhblorLolKs4lJozjDWVmijJZdGYyyXZDXnWu9C8Fjlva9b8Kecs_zMJJ-Z5Bcmk-FpNkz3_OhG3031_hP_AhX3ZJ4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature</title><source>ACS Publications</source><creator>Van Daele, Michiel ; Griffiths, Matthew B. E ; Raza, Ali ; Minjauw, Matthias M ; Solano, Eduardo ; Feng, Ji-Yu ; Ramachandran, Ranjith K ; Clemmen, Stéphane ; Baets, Roel ; Barry, Seán T ; Detavernier, Christophe ; Dendooven, Jolien</creator><creatorcontrib>Van Daele, Michiel ; Griffiths, Matthew B. E ; Raza, Ali ; Minjauw, Matthias M ; Solano, Eduardo ; Feng, Ji-Yu ; Ramachandran, Ranjith K ; Clemmen, Stéphane ; Baets, Roel ; Barry, Seán T ; Detavernier, Christophe ; Dendooven, Jolien</creatorcontrib><description>A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (&lt;1 at. % carbon and oxygen impurities and &lt;0.1 at. % phosphorous). A low resistivity value was obtained (5.9 ± 0.3 μΩ cm), and X-ray diffraction measurements confirm that films deposited at 50 and 120 °C are polycrystalline. The process forms gold nanoparticles on oxide surfaces, which coalesce into wormlike nanostructures during deposition. Nanostructures grown at 120 °C are evaluated as substrates for free-space surface-enhanced Raman spectroscopy (SERS) and exhibit an excellent enhancement factor that is without optimization, only one order of magnitude weaker than state-of-the-art gold nanodome substrates. The reported gold PE-ALD process therefore offers a deposition method to create SERS substrates that are template-free and does not require lithography. Using this process, it is possible to deposit nanostructured gold layers at low temperatures on complex three-dimensional (3D) substrates, opening up opportunities for the application of gold ALD in flexible electronics, heterogeneous catalysis, or the preparation of 3D SERS substrates.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.9b10848</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>ACS applied materials &amp; interfaces, 2019-10, Vol.11 (40), p.37229-37238</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a347t-356aa4964e8b1e80400beace7fec2eb5cdd413bf40f132510e65c258531385e63</citedby><cites>FETCH-LOGICAL-a347t-356aa4964e8b1e80400beace7fec2eb5cdd413bf40f132510e65c258531385e63</cites><orcidid>0000-0002-2348-2271 ; 0000-0003-3620-8949 ; 0000-0002-2385-3693 ; 0000-0002-9423-219X ; 0000-0001-7653-0858 ; 0000-0002-5452-8690</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsami.9b10848$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsami.9b10848$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,777,781,2752,27057,27905,27906,56719,56769</link.rule.ids></links><search><creatorcontrib>Van Daele, Michiel</creatorcontrib><creatorcontrib>Griffiths, Matthew B. E</creatorcontrib><creatorcontrib>Raza, Ali</creatorcontrib><creatorcontrib>Minjauw, Matthias M</creatorcontrib><creatorcontrib>Solano, Eduardo</creatorcontrib><creatorcontrib>Feng, Ji-Yu</creatorcontrib><creatorcontrib>Ramachandran, Ranjith K</creatorcontrib><creatorcontrib>Clemmen, Stéphane</creatorcontrib><creatorcontrib>Baets, Roel</creatorcontrib><creatorcontrib>Barry, Seán T</creatorcontrib><creatorcontrib>Detavernier, Christophe</creatorcontrib><creatorcontrib>Dendooven, Jolien</creatorcontrib><title>Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (&lt;1 at. % carbon and oxygen impurities and &lt;0.1 at. % phosphorous). A low resistivity value was obtained (5.9 ± 0.3 μΩ cm), and X-ray diffraction measurements confirm that films deposited at 50 and 120 °C are polycrystalline. The process forms gold nanoparticles on oxide surfaces, which coalesce into wormlike nanostructures during deposition. Nanostructures grown at 120 °C are evaluated as substrates for free-space surface-enhanced Raman spectroscopy (SERS) and exhibit an excellent enhancement factor that is without optimization, only one order of magnitude weaker than state-of-the-art gold nanodome substrates. The reported gold PE-ALD process therefore offers a deposition method to create SERS substrates that are template-free and does not require lithography. Using this process, it is possible to deposit nanostructured gold layers at low temperatures on complex three-dimensional (3D) substrates, opening up opportunities for the application of gold ALD in flexible electronics, heterogeneous catalysis, or the preparation of 3D SERS substrates.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kM1Lw0AQxRdRsFavnvcspO5nujmWWqsQqkg8h8lmgilJNuwmh_73pqR48zTDzHuPx4-QR85WnAn-DDZAW6-SgjOjzBVZ8ESpyAgtrv92pW7JXQhHxmIpmF6Q7LOB0EK0636gs1jSzeDa2tIUTujpC_Yu1EPtOuoqeoDOhcGPdhj9pNy7pqQHBE-_nGtphm2PHs6_e3JTQRPw4TKX5Pt1l23fovRj_77dpBFItR4iqWMAlcQKTcHRMMVYgWBxXaEVWGhblorLolKs4lJozjDWVmijJZdGYyyXZDXnWu9C8Fjlva9b8Kecs_zMJJ-Z5Bcmk-FpNkz3_OhG3031_hP_AhX3ZJ4</recordid><startdate>20191009</startdate><enddate>20191009</enddate><creator>Van Daele, Michiel</creator><creator>Griffiths, Matthew B. E</creator><creator>Raza, Ali</creator><creator>Minjauw, Matthias M</creator><creator>Solano, Eduardo</creator><creator>Feng, Ji-Yu</creator><creator>Ramachandran, Ranjith K</creator><creator>Clemmen, Stéphane</creator><creator>Baets, Roel</creator><creator>Barry, Seán T</creator><creator>Detavernier, Christophe</creator><creator>Dendooven, Jolien</creator><general>American Chemical Society</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-2348-2271</orcidid><orcidid>https://orcid.org/0000-0003-3620-8949</orcidid><orcidid>https://orcid.org/0000-0002-2385-3693</orcidid><orcidid>https://orcid.org/0000-0002-9423-219X</orcidid><orcidid>https://orcid.org/0000-0001-7653-0858</orcidid><orcidid>https://orcid.org/0000-0002-5452-8690</orcidid></search><sort><creationdate>20191009</creationdate><title>Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature</title><author>Van Daele, Michiel ; Griffiths, Matthew B. E ; Raza, Ali ; Minjauw, Matthias M ; Solano, Eduardo ; Feng, Ji-Yu ; Ramachandran, Ranjith K ; Clemmen, Stéphane ; Baets, Roel ; Barry, Seán T ; Detavernier, Christophe ; Dendooven, Jolien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a347t-356aa4964e8b1e80400beace7fec2eb5cdd413bf40f132510e65c258531385e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Van Daele, Michiel</creatorcontrib><creatorcontrib>Griffiths, Matthew B. E</creatorcontrib><creatorcontrib>Raza, Ali</creatorcontrib><creatorcontrib>Minjauw, Matthias M</creatorcontrib><creatorcontrib>Solano, Eduardo</creatorcontrib><creatorcontrib>Feng, Ji-Yu</creatorcontrib><creatorcontrib>Ramachandran, Ranjith K</creatorcontrib><creatorcontrib>Clemmen, Stéphane</creatorcontrib><creatorcontrib>Baets, Roel</creatorcontrib><creatorcontrib>Barry, Seán T</creatorcontrib><creatorcontrib>Detavernier, Christophe</creatorcontrib><creatorcontrib>Dendooven, Jolien</creatorcontrib><collection>CrossRef</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Van Daele, Michiel</au><au>Griffiths, Matthew B. E</au><au>Raza, Ali</au><au>Minjauw, Matthias M</au><au>Solano, Eduardo</au><au>Feng, Ji-Yu</au><au>Ramachandran, Ranjith K</au><au>Clemmen, Stéphane</au><au>Baets, Roel</au><au>Barry, Seán T</au><au>Detavernier, Christophe</au><au>Dendooven, Jolien</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2019-10-09</date><risdate>2019</risdate><volume>11</volume><issue>40</issue><spage>37229</spage><epage>37238</epage><pages>37229-37238</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (&lt;1 at. % carbon and oxygen impurities and &lt;0.1 at. % phosphorous). A low resistivity value was obtained (5.9 ± 0.3 μΩ cm), and X-ray diffraction measurements confirm that films deposited at 50 and 120 °C are polycrystalline. The process forms gold nanoparticles on oxide surfaces, which coalesce into wormlike nanostructures during deposition. Nanostructures grown at 120 °C are evaluated as substrates for free-space surface-enhanced Raman spectroscopy (SERS) and exhibit an excellent enhancement factor that is without optimization, only one order of magnitude weaker than state-of-the-art gold nanodome substrates. The reported gold PE-ALD process therefore offers a deposition method to create SERS substrates that are template-free and does not require lithography. Using this process, it is possible to deposit nanostructured gold layers at low temperatures on complex three-dimensional (3D) substrates, opening up opportunities for the application of gold ALD in flexible electronics, heterogeneous catalysis, or the preparation of 3D SERS substrates.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsami.9b10848</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-2348-2271</orcidid><orcidid>https://orcid.org/0000-0003-3620-8949</orcidid><orcidid>https://orcid.org/0000-0002-2385-3693</orcidid><orcidid>https://orcid.org/0000-0002-9423-219X</orcidid><orcidid>https://orcid.org/0000-0001-7653-0858</orcidid><orcidid>https://orcid.org/0000-0002-5452-8690</orcidid><oa>free_for_read</oa></addata></record>
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url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T06%3A27%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Plasma-Enhanced%20Atomic%20Layer%20Deposition%20of%20Nanostructured%20Gold%20Near%20Room%20Temperature&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Van%20Daele,%20Michiel&rft.date=2019-10-09&rft.volume=11&rft.issue=40&rft.spage=37229&rft.epage=37238&rft.pages=37229-37238&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.9b10848&rft_dat=%3Cacs_cross%3Eb682022678%3C/acs_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true