Oxidation-Induced Changes in the ALD-Al 2 O 3 /InAs(100) Interface and Control of the Changes for Device Processing

InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation...

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Veröffentlicht in:	ACS applied materials & interfaces 2018-12, Vol.10 (51), p.44932-44940
Hauptverfasser:	Tuominen, Marjukka, Mäkelä, Jaakko, Yasir, Muhammad, Dahl, Johnny, Granroth, Sari, Lehtiö, Juha-Pekka, Félix, Roberto, Laukkanen, Pekka, Kuzmin, Mikhail, Laitinen, Mikko, Punkkinen, Marko P J, Hedman, Hannu-Pekka, Punkkinen, Risto, Polojärvi, Ville, Lyytikäinen, Jari, Tukiainen, Antti, Guina, Mircea, Kokko, Kalevi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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