ALD-Zn x Ti y O as Window Layer in Cu(In,Ga)Se 2 Solar Cells
We report on the application of Zn Ti O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se (CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the fron...
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| Veröffentlicht in: | ACS applied materials & interfaces 2018-12, Vol.10 (50), p.43603-43609 |
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| creator | Löckinger, Johannes Nishiwaki, Shiro Andres, Christian Erni, Rolf Rossell, Marta D Romanyuk, Yaroslav E Buecheler, Stephan Tiwari, Ayodhya N |
| description | We report on the application of Zn
Ti
O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se
(CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn
Ti
O allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V
). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn
Ti
O with varying Ti content with a [Ti]/([Ti] + [Zn]) atomic fraction up to ∼0.35 at a relatively low temperature of 373 K. The Ti content influenced the absorption behavior of the Zn
Ti
O layer by increasing the optical bandgap >3.5 eV in the investigated range. Temperature-dependent current-voltage ( I- V) measurements of solar cells were performed to investigate the photocurrent blocking behavior observed for high Ti content. Possible conduction band discontinuities introduced by Zn
Ti
O are discussed based on X-ray photoelectron spectroscopy (XPS) measurements. |
| doi_str_mv | 10.1021/acsami.8b14490 |
| format | Article |
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Ti
O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se
(CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn
Ti
O allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V
). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn
Ti
O with varying Ti content with a [Ti]/([Ti] + [Zn]) atomic fraction up to ∼0.35 at a relatively low temperature of 373 K. The Ti content influenced the absorption behavior of the Zn
Ti
O layer by increasing the optical bandgap >3.5 eV in the investigated range. Temperature-dependent current-voltage ( I- V) measurements of solar cells were performed to investigate the photocurrent blocking behavior observed for high Ti content. Possible conduction band discontinuities introduced by Zn
Ti
O are discussed based on X-ray photoelectron spectroscopy (XPS) measurements.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.8b14490</identifier><identifier>PMID: 30462473</identifier><language>eng</language><publisher>United States</publisher><ispartof>ACS applied materials & interfaces, 2018-12, Vol.10 (50), p.43603-43609</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1073-7a2539c5b532c70289044cbea53bb4ebc818555ac24fa0c0bf9b7907173c177b3</citedby><cites>FETCH-LOGICAL-c1073-7a2539c5b532c70289044cbea53bb4ebc818555ac24fa0c0bf9b7907173c177b3</cites><orcidid>0000-0002-8154-3511 ; 0000-0003-0942-9965</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2765,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30462473$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Löckinger, Johannes</creatorcontrib><creatorcontrib>Nishiwaki, Shiro</creatorcontrib><creatorcontrib>Andres, Christian</creatorcontrib><creatorcontrib>Erni, Rolf</creatorcontrib><creatorcontrib>Rossell, Marta D</creatorcontrib><creatorcontrib>Romanyuk, Yaroslav E</creatorcontrib><creatorcontrib>Buecheler, Stephan</creatorcontrib><creatorcontrib>Tiwari, Ayodhya N</creatorcontrib><title>ALD-Zn x Ti y O as Window Layer in Cu(In,Ga)Se 2 Solar Cells</title><title>ACS applied materials & interfaces</title><addtitle>ACS Appl Mater Interfaces</addtitle><description>We report on the application of Zn
Ti
O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se
(CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn
Ti
O allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V
). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn
Ti
O with varying Ti content with a [Ti]/([Ti] + [Zn]) atomic fraction up to ∼0.35 at a relatively low temperature of 373 K. The Ti content influenced the absorption behavior of the Zn
Ti
O layer by increasing the optical bandgap >3.5 eV in the investigated range. Temperature-dependent current-voltage ( I- V) measurements of solar cells were performed to investigate the photocurrent blocking behavior observed for high Ti content. Possible conduction band discontinuities introduced by Zn
Ti
O are discussed based on X-ray photoelectron spectroscopy (XPS) measurements.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kMFLwzAYxYMobk6vHiVHBVu_JF-WBryMqnNQ2GETwUtJshQqbTcShva_V-nc6b3Dew_ej5BrBikDzh6Mi6at08wyRA0nZMw0YpJxyU-PHnFELmL8BJgKDvKcjATglKMSY_I4K56Sj45-03VNe7qkJtL3uttsv2hheh9o3dF8f7vo7ufmbuUpp6ttYwLNfdPES3JWmSb6q4NOyNvL8zp_TYrlfJHPisQxUCJRhkuhnbRScKeAZxoQnfVGCmvRW5exTEppHMfKgANbaas0KKaEY0pZMSHpsOvCNsbgq3IX6taEvmRQ_mEoBwzlAcNv4WYo7Pa29Ztj_P-3-AEepFWF</recordid><startdate>20181219</startdate><enddate>20181219</enddate><creator>Löckinger, Johannes</creator><creator>Nishiwaki, Shiro</creator><creator>Andres, Christian</creator><creator>Erni, Rolf</creator><creator>Rossell, Marta D</creator><creator>Romanyuk, Yaroslav E</creator><creator>Buecheler, Stephan</creator><creator>Tiwari, Ayodhya N</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-8154-3511</orcidid><orcidid>https://orcid.org/0000-0003-0942-9965</orcidid></search><sort><creationdate>20181219</creationdate><title>ALD-Zn x Ti y O as Window Layer in Cu(In,Ga)Se 2 Solar Cells</title><author>Löckinger, Johannes ; Nishiwaki, Shiro ; Andres, Christian ; Erni, Rolf ; Rossell, Marta D ; Romanyuk, Yaroslav E ; Buecheler, Stephan ; Tiwari, Ayodhya N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1073-7a2539c5b532c70289044cbea53bb4ebc818555ac24fa0c0bf9b7907173c177b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Löckinger, Johannes</creatorcontrib><creatorcontrib>Nishiwaki, Shiro</creatorcontrib><creatorcontrib>Andres, Christian</creatorcontrib><creatorcontrib>Erni, Rolf</creatorcontrib><creatorcontrib>Rossell, Marta D</creatorcontrib><creatorcontrib>Romanyuk, Yaroslav E</creatorcontrib><creatorcontrib>Buecheler, Stephan</creatorcontrib><creatorcontrib>Tiwari, Ayodhya N</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>ACS applied materials & interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Löckinger, Johannes</au><au>Nishiwaki, Shiro</au><au>Andres, Christian</au><au>Erni, Rolf</au><au>Rossell, Marta D</au><au>Romanyuk, Yaroslav E</au><au>Buecheler, Stephan</au><au>Tiwari, Ayodhya N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ALD-Zn x Ti y O as Window Layer in Cu(In,Ga)Se 2 Solar Cells</atitle><jtitle>ACS applied materials & interfaces</jtitle><addtitle>ACS Appl Mater Interfaces</addtitle><date>2018-12-19</date><risdate>2018</risdate><volume>10</volume><issue>50</issue><spage>43603</spage><epage>43609</epage><pages>43603-43609</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>We report on the application of Zn
Ti
O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se
(CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn
Ti
O allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V
). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn
Ti
O with varying Ti content with a [Ti]/([Ti] + [Zn]) atomic fraction up to ∼0.35 at a relatively low temperature of 373 K. The Ti content influenced the absorption behavior of the Zn
Ti
O layer by increasing the optical bandgap >3.5 eV in the investigated range. Temperature-dependent current-voltage ( I- V) measurements of solar cells were performed to investigate the photocurrent blocking behavior observed for high Ti content. Possible conduction band discontinuities introduced by Zn
Ti
O are discussed based on X-ray photoelectron spectroscopy (XPS) measurements.</abstract><cop>United States</cop><pmid>30462473</pmid><doi>10.1021/acsami.8b14490</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-8154-3511</orcidid><orcidid>https://orcid.org/0000-0003-0942-9965</orcidid></addata></record> |
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| language | eng |
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| source | American Chemical Society Journals |
| title | ALD-Zn x Ti y O as Window Layer in Cu(In,Ga)Se 2 Solar Cells |
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