Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO 2 (001) Anatase Thin Films
We report the study of anatase TiO (001)-oriented thin films grown by pulsed laser deposition on LaAlO (001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti -localized states and their relationship with the structural and electronic properties on the...
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| Veröffentlicht in: | ACS applied materials & interfaces 2017-07, Vol.9 (27), p.23099-23106 |
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| creator | Gobaut, Benoit Orgiani, Pasquale Sambri, Alessia di Gennaro, Emiliano Aruta, Carmela Borgatti, Francesco Lollobrigida, Valerio Céolin, Denis Rueff, Jean-Pascal Ciancio, Regina Bigi, Chiara Das, Pranab Kumar Fujii, Jun Krizmancic, Damjan Torelli, Piero Vobornik, Ivana Rossi, Giorgio Miletto Granozio, Fabio Scotti di Uccio, Umberto Panaccione, Giancarlo |
| description | We report the study of anatase TiO
(001)-oriented thin films grown by pulsed laser deposition on LaAlO
(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti
-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti
electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti
only in a well-defined range of deposition pressure; outside this range, Ti
and the strength of the in-gap states are reduced. |
| doi_str_mv | 10.1021/acsami.7b03181 |
| format | Article |
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(001)-oriented thin films grown by pulsed laser deposition on LaAlO
(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti
-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti
electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti
only in a well-defined range of deposition pressure; outside this range, Ti
and the strength of the in-gap states are reduced.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.7b03181</identifier><identifier>PMID: 28613812</identifier><language>eng</language><publisher>United States</publisher><ispartof>ACS applied materials & interfaces, 2017-07, Vol.9 (27), p.23099-23106</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1072-f641c8347a7dfb48fc590f0771b26d71b022126b1c34c9a5275505978648a143</citedby><cites>FETCH-LOGICAL-c1072-f641c8347a7dfb48fc590f0771b26d71b022126b1c34c9a5275505978648a143</cites><orcidid>0000-0002-9417-7848 ; 0000-0002-4086-8774 ; 0000-0002-6917-6667 ; 0000-0002-1082-9651</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2752,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28613812$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Gobaut, Benoit</creatorcontrib><creatorcontrib>Orgiani, Pasquale</creatorcontrib><creatorcontrib>Sambri, Alessia</creatorcontrib><creatorcontrib>di Gennaro, Emiliano</creatorcontrib><creatorcontrib>Aruta, Carmela</creatorcontrib><creatorcontrib>Borgatti, Francesco</creatorcontrib><creatorcontrib>Lollobrigida, Valerio</creatorcontrib><creatorcontrib>Céolin, Denis</creatorcontrib><creatorcontrib>Rueff, Jean-Pascal</creatorcontrib><creatorcontrib>Ciancio, Regina</creatorcontrib><creatorcontrib>Bigi, Chiara</creatorcontrib><creatorcontrib>Das, Pranab Kumar</creatorcontrib><creatorcontrib>Fujii, Jun</creatorcontrib><creatorcontrib>Krizmancic, Damjan</creatorcontrib><creatorcontrib>Torelli, Piero</creatorcontrib><creatorcontrib>Vobornik, Ivana</creatorcontrib><creatorcontrib>Rossi, Giorgio</creatorcontrib><creatorcontrib>Miletto Granozio, Fabio</creatorcontrib><creatorcontrib>Scotti di Uccio, Umberto</creatorcontrib><creatorcontrib>Panaccione, Giancarlo</creatorcontrib><title>Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO 2 (001) Anatase Thin Films</title><title>ACS applied materials & interfaces</title><addtitle>ACS Appl Mater Interfaces</addtitle><description>We report the study of anatase TiO
(001)-oriented thin films grown by pulsed laser deposition on LaAlO
(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti
-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti
electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti
only in a well-defined range of deposition pressure; outside this range, Ti
and the strength of the in-gap states are reduced.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAQhi0EoqWwMiKPMKTc-SN2xqpQQKpUBNkjx7WpUZNUcSrRf09KS5e7k97nveEh5BZhjMDw0dhoqjBWJXDUeEaGmAmRaCbZ-ekWYkCuYvwGSDkDeUkGTKfINbIhCR_N2tHG08XP7svV9Mltmhi60NT0vXUxbltHQ027laOzpq3MX9LjeehR72xHPzvTubiH8rCgjN4D4AOd1KYz0dF81QezsK7iNbnwZh3dzXGPSD57zqevyXzx8jadzBOLoFjiU4FWc6GMWvpSaG9lBh6UwpKly34CY8jSEi0XNjOSKSlBZkqnQhsUfETGh7e2bWJsnS82bahMuysQir2y4qCsOCrrC3eHwmZbVm55wv8d8V8AD2WB</recordid><startdate>20170712</startdate><enddate>20170712</enddate><creator>Gobaut, Benoit</creator><creator>Orgiani, Pasquale</creator><creator>Sambri, Alessia</creator><creator>di Gennaro, Emiliano</creator><creator>Aruta, Carmela</creator><creator>Borgatti, Francesco</creator><creator>Lollobrigida, Valerio</creator><creator>Céolin, Denis</creator><creator>Rueff, Jean-Pascal</creator><creator>Ciancio, Regina</creator><creator>Bigi, Chiara</creator><creator>Das, Pranab Kumar</creator><creator>Fujii, Jun</creator><creator>Krizmancic, Damjan</creator><creator>Torelli, Piero</creator><creator>Vobornik, Ivana</creator><creator>Rossi, Giorgio</creator><creator>Miletto Granozio, Fabio</creator><creator>Scotti di Uccio, Umberto</creator><creator>Panaccione, Giancarlo</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-9417-7848</orcidid><orcidid>https://orcid.org/0000-0002-4086-8774</orcidid><orcidid>https://orcid.org/0000-0002-6917-6667</orcidid><orcidid>https://orcid.org/0000-0002-1082-9651</orcidid></search><sort><creationdate>20170712</creationdate><title>Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO 2 (001) Anatase Thin Films</title><author>Gobaut, Benoit ; Orgiani, Pasquale ; Sambri, Alessia ; di Gennaro, Emiliano ; Aruta, Carmela ; Borgatti, Francesco ; Lollobrigida, Valerio ; Céolin, Denis ; Rueff, Jean-Pascal ; Ciancio, Regina ; Bigi, Chiara ; Das, Pranab Kumar ; Fujii, Jun ; Krizmancic, Damjan ; Torelli, Piero ; Vobornik, Ivana ; Rossi, Giorgio ; Miletto Granozio, Fabio ; Scotti di Uccio, Umberto ; Panaccione, Giancarlo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1072-f641c8347a7dfb48fc590f0771b26d71b022126b1c34c9a5275505978648a143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gobaut, Benoit</creatorcontrib><creatorcontrib>Orgiani, Pasquale</creatorcontrib><creatorcontrib>Sambri, Alessia</creatorcontrib><creatorcontrib>di Gennaro, Emiliano</creatorcontrib><creatorcontrib>Aruta, Carmela</creatorcontrib><creatorcontrib>Borgatti, Francesco</creatorcontrib><creatorcontrib>Lollobrigida, Valerio</creatorcontrib><creatorcontrib>Céolin, Denis</creatorcontrib><creatorcontrib>Rueff, Jean-Pascal</creatorcontrib><creatorcontrib>Ciancio, Regina</creatorcontrib><creatorcontrib>Bigi, Chiara</creatorcontrib><creatorcontrib>Das, Pranab Kumar</creatorcontrib><creatorcontrib>Fujii, Jun</creatorcontrib><creatorcontrib>Krizmancic, Damjan</creatorcontrib><creatorcontrib>Torelli, Piero</creatorcontrib><creatorcontrib>Vobornik, Ivana</creatorcontrib><creatorcontrib>Rossi, Giorgio</creatorcontrib><creatorcontrib>Miletto Granozio, Fabio</creatorcontrib><creatorcontrib>Scotti di Uccio, Umberto</creatorcontrib><creatorcontrib>Panaccione, Giancarlo</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>ACS applied materials & interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gobaut, Benoit</au><au>Orgiani, Pasquale</au><au>Sambri, Alessia</au><au>di Gennaro, Emiliano</au><au>Aruta, Carmela</au><au>Borgatti, Francesco</au><au>Lollobrigida, Valerio</au><au>Céolin, Denis</au><au>Rueff, Jean-Pascal</au><au>Ciancio, Regina</au><au>Bigi, Chiara</au><au>Das, Pranab Kumar</au><au>Fujii, Jun</au><au>Krizmancic, Damjan</au><au>Torelli, Piero</au><au>Vobornik, Ivana</au><au>Rossi, Giorgio</au><au>Miletto Granozio, Fabio</au><au>Scotti di Uccio, Umberto</au><au>Panaccione, Giancarlo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO 2 (001) Anatase Thin Films</atitle><jtitle>ACS applied materials & interfaces</jtitle><addtitle>ACS Appl Mater Interfaces</addtitle><date>2017-07-12</date><risdate>2017</risdate><volume>9</volume><issue>27</issue><spage>23099</spage><epage>23106</epage><pages>23099-23106</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>We report the study of anatase TiO
(001)-oriented thin films grown by pulsed laser deposition on LaAlO
(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti
-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti
electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti
only in a well-defined range of deposition pressure; outside this range, Ti
and the strength of the in-gap states are reduced.</abstract><cop>United States</cop><pmid>28613812</pmid><doi>10.1021/acsami.7b03181</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-9417-7848</orcidid><orcidid>https://orcid.org/0000-0002-4086-8774</orcidid><orcidid>https://orcid.org/0000-0002-6917-6667</orcidid><orcidid>https://orcid.org/0000-0002-1082-9651</orcidid></addata></record> |
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| title | Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO 2 (001) Anatase Thin Films |
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