Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS 2 Using Plasma-Enhanced Atomic Layer Deposition

Regardless of the application, MoS requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. However, the chemically inert surface of MoS prevents un...

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Veröffentlicht in:	ACS applied materials & interfaces 2017-07, Vol.9 (27), p.23072-23080
Hauptverfasser:	Price, Katherine M, Schauble, Kirstin E, McGuire, Felicia A, Farmer, Damon B, Franklin, Aaron D
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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