Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS photodetectors. The observed high photocurrent and extended response time in our devices ar...
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| Veröffentlicht in: | ACS applied materials & interfaces 2024-03, Vol.16 (12), p.15596-15604 |
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| container_title | ACS applied materials & interfaces |
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| creator | Radatović, Borna Çakıroğlu, Onur Jadriško, Valentino Frisenda, Riccardo Senkić, Ana Vujičić, Nataša Kralj, Marko Petrović, Marin Castellanos-Gomez, Andres |
| description | In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS
photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS
photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS
monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS
for further functionalization and utilization of different flexible sensors. |
| doi_str_mv | 10.1021/acsami.4c00458 |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acsami_4c00458</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>38500411</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1071-44dbc826ee73688d269ddf628a3ba75ba5820c03856db752deb9d34ee47a62f13</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EoqVw5YjyAg7-j3OsqlKQgkAqnKONvaFBTVLZ4dC3Jyilp5nDzGrnI-Ses5QzwR_BRWibVDnGlLYXZM5zpagVWlyevVIzchPjN2NGCqavyUxaPeY5n5N8OwRoOrrudtA59EkB4QvpMiAkr33X7-GIYXTbRCTvu37oPQ7ohj7EW3JVwz7i3UkX5PNp_bF6psXb5mW1LKjjLONUKV85KwxiJo21Xpjc-9oIC7KCTFegrWCOjR8ZX2VaeKxyLxWiysCImssFSae7LvQxBqzLQ2haCMeSs_KPQTkxKE8MxsLDVDj8VC36c_x_tPwFm8pXxg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors</title><source>ACS Publications</source><creator>Radatović, Borna ; Çakıroğlu, Onur ; Jadriško, Valentino ; Frisenda, Riccardo ; Senkić, Ana ; Vujičić, Nataša ; Kralj, Marko ; Petrović, Marin ; Castellanos-Gomez, Andres</creator><creatorcontrib>Radatović, Borna ; Çakıroğlu, Onur ; Jadriško, Valentino ; Frisenda, Riccardo ; Senkić, Ana ; Vujičić, Nataša ; Kralj, Marko ; Petrović, Marin ; Castellanos-Gomez, Andres</creatorcontrib><description>In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS
photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS
photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS
monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS
for further functionalization and utilization of different flexible sensors.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.4c00458</identifier><identifier>PMID: 38500411</identifier><language>eng</language><publisher>United States</publisher><ispartof>ACS applied materials & interfaces, 2024-03, Vol.16 (12), p.15596-15604</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1071-44dbc826ee73688d269ddf628a3ba75ba5820c03856db752deb9d34ee47a62f13</citedby><cites>FETCH-LOGICAL-c1071-44dbc826ee73688d269ddf628a3ba75ba5820c03856db752deb9d34ee47a62f13</cites><orcidid>0000-0002-9786-3130 ; 0000-0002-3384-3405 ; 0000-0002-2234-1207 ; 0000-0001-5012-6005 ; 0000-0002-5437-5786 ; 0000-0002-0567-5299</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2752,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38500411$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Radatović, Borna</creatorcontrib><creatorcontrib>Çakıroğlu, Onur</creatorcontrib><creatorcontrib>Jadriško, Valentino</creatorcontrib><creatorcontrib>Frisenda, Riccardo</creatorcontrib><creatorcontrib>Senkić, Ana</creatorcontrib><creatorcontrib>Vujičić, Nataša</creatorcontrib><creatorcontrib>Kralj, Marko</creatorcontrib><creatorcontrib>Petrović, Marin</creatorcontrib><creatorcontrib>Castellanos-Gomez, Andres</creatorcontrib><title>Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors</title><title>ACS applied materials & interfaces</title><addtitle>ACS Appl Mater Interfaces</addtitle><description>In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS
photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS
photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS
monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS
for further functionalization and utilization of different flexible sensors.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OwzAQhC0EoqVw5YjyAg7-j3OsqlKQgkAqnKONvaFBTVLZ4dC3Jyilp5nDzGrnI-Ses5QzwR_BRWibVDnGlLYXZM5zpagVWlyevVIzchPjN2NGCqavyUxaPeY5n5N8OwRoOrrudtA59EkB4QvpMiAkr33X7-GIYXTbRCTvu37oPQ7ohj7EW3JVwz7i3UkX5PNp_bF6psXb5mW1LKjjLONUKV85KwxiJo21Xpjc-9oIC7KCTFegrWCOjR8ZX2VaeKxyLxWiysCImssFSae7LvQxBqzLQ2haCMeSs_KPQTkxKE8MxsLDVDj8VC36c_x_tPwFm8pXxg</recordid><startdate>20240327</startdate><enddate>20240327</enddate><creator>Radatović, Borna</creator><creator>Çakıroğlu, Onur</creator><creator>Jadriško, Valentino</creator><creator>Frisenda, Riccardo</creator><creator>Senkić, Ana</creator><creator>Vujičić, Nataša</creator><creator>Kralj, Marko</creator><creator>Petrović, Marin</creator><creator>Castellanos-Gomez, Andres</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-9786-3130</orcidid><orcidid>https://orcid.org/0000-0002-3384-3405</orcidid><orcidid>https://orcid.org/0000-0002-2234-1207</orcidid><orcidid>https://orcid.org/0000-0001-5012-6005</orcidid><orcidid>https://orcid.org/0000-0002-5437-5786</orcidid><orcidid>https://orcid.org/0000-0002-0567-5299</orcidid></search><sort><creationdate>20240327</creationdate><title>Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors</title><author>Radatović, Borna ; Çakıroğlu, Onur ; Jadriško, Valentino ; Frisenda, Riccardo ; Senkić, Ana ; Vujičić, Nataša ; Kralj, Marko ; Petrović, Marin ; Castellanos-Gomez, Andres</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1071-44dbc826ee73688d269ddf628a3ba75ba5820c03856db752deb9d34ee47a62f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Radatović, Borna</creatorcontrib><creatorcontrib>Çakıroğlu, Onur</creatorcontrib><creatorcontrib>Jadriško, Valentino</creatorcontrib><creatorcontrib>Frisenda, Riccardo</creatorcontrib><creatorcontrib>Senkić, Ana</creatorcontrib><creatorcontrib>Vujičić, Nataša</creatorcontrib><creatorcontrib>Kralj, Marko</creatorcontrib><creatorcontrib>Petrović, Marin</creatorcontrib><creatorcontrib>Castellanos-Gomez, Andres</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>ACS applied materials & interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Radatović, Borna</au><au>Çakıroğlu, Onur</au><au>Jadriško, Valentino</au><au>Frisenda, Riccardo</au><au>Senkić, Ana</au><au>Vujičić, Nataša</au><au>Kralj, Marko</au><au>Petrović, Marin</au><au>Castellanos-Gomez, Andres</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors</atitle><jtitle>ACS applied materials & interfaces</jtitle><addtitle>ACS Appl Mater Interfaces</addtitle><date>2024-03-27</date><risdate>2024</risdate><volume>16</volume><issue>12</issue><spage>15596</spage><epage>15604</epage><pages>15596-15604</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS
photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS
photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS
monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS
for further functionalization and utilization of different flexible sensors.</abstract><cop>United States</cop><pmid>38500411</pmid><doi>10.1021/acsami.4c00458</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-9786-3130</orcidid><orcidid>https://orcid.org/0000-0002-3384-3405</orcidid><orcidid>https://orcid.org/0000-0002-2234-1207</orcidid><orcidid>https://orcid.org/0000-0001-5012-6005</orcidid><orcidid>https://orcid.org/0000-0002-5437-5786</orcidid><orcidid>https://orcid.org/0000-0002-0567-5299</orcidid></addata></record> |
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| title | Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors |
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