Modulation of Switching Characteristics in a Single VO 2 Nanobeam with Interfacial Strain via the Interconnection of Multiple Nanoscale Channels

We demonstrate the modulation of electrical switching properties through the interconnection of multiple nanoscale channels (∼600 nm) in a single VO nanobeam with a coexisting metal-insulator (M-I) domain configuration during phase transition. The Raman scattering characteristics of the synthesized...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ACS applied materials & interfaces 2023-03, Vol.15 (8), p.11296-11303
Hauptverfasser:	Hong, Woong-Ki, Jang, Hun Soo, Yoon, Jongwon, Choi, Woo Jin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!