WSe 2 /WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention

A two-dimensional (2D) nonvolatile memory device architecture to improve the long-term charge retention with the minimum charge loss without compromising storage capacity and the extinction ratio for practical applications has been an imminent demand. To address the current issue, we adopted a novel...

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Veröffentlicht in:	ACS applied materials & interfaces 2022-01, Vol.14 (2), p.3467-3475
Hauptverfasser:	Siao, Ming-Deng, Gandhi, Ashish Chhaganlal, Sahoo, Anup Kumar, Wu, Yi-Chieh, Syu, Hong-Kai, Tsai, Meng-Yu, Tsai, Tsung-Han, Yang, Yueh-Chiang, Lin, Yen-Fu, Liu, Rai-Shung, Chiu, Po-Wen
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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