Tunable Performance of Quantum Dot-MoS 2 Hybrid Photodetectors via Interface Engineering

Heterostructures of quantum dots (QDs) and two-dimensional (2D) materials show promising potential for photodetection applications owing to their combination of high optical absorption and good in-plane carrier mobility. In this work, the performance of QD-2D photodetectors is tuned by band engineering. Devices are fabricated by coating MoS nanosheets with InP QDs, type-I core-shell InP/ZnS QDs, and type-II core-shell InP/CdS QDs. Comparative spectroscopic and photoelectric studies of different hybrids show that the energy band alignment and shell thickness can influence the efficiency of charge transfer (CT), energy transfer (ET), and defect-related processes between QDs and MoS . Benefiting from efficient CT between the QDs and MoS , a significant enhancement of responsivity and detectivity is observed in thick-shell InP/CdS QD-MoS devices. Our results demonstrate the feasibility of using core-shell QDs for regulating the ET and CT efficiency in heterostructures and highlight the importance of interface band design in QD-2D and other low-dimensional photodetectors.