High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach

The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited indium gallium oxide (IGO) (In1–x Ga x O) films as high-mobility n-channel semiconducting layers was investigated. Different Ga concentrations in 10–13 nm thick In1–x Ga x O films allowed versatile phase s...

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Veröffentlicht in:	ACS applied materials & interfaces 2020-11, Vol.12 (47), p.52937-52951
Hauptverfasser:	Yang, Hyun Ji, Seul, Hyeon Joo, Kim, Min Jae, Kim, Yerin, Cho, Hyun Cheol, Cho, Min Hoe, Song, Yun Heub, Yang, Hoichang, Jeong, Jae Kyeong
Format:	Artikel
Sprache:	eng
Schlagworte:	Functional Inorganic Materials and Devices
Online-Zugang:	Volltext
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