Thickness-Dependent Growth Behaviors of Sputtered Amorphous InGaZnO Films Depending on the Substrates and Sputtering Conditions

The deposition behavior and thin-film transistor (TFT) characteristics of amorphous indium–gallium–zinc oxide (a-IGZO) films on two gate-insulating films, thermally oxidized SiO2, and atomic layer deposited SiO2 were investigated. The a-IGZO films generally showed decreasing deposition rate and In c...

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Veröffentlicht in:	ACS applied electronic materials 2023-12, Vol.5 (12), p.6686-6696
Hauptverfasser:	Lee, Sunjin, Lee, Yonghee, Kang, Sukin, Mun, Sahngik, Choi, Jinheon, Hwang, Cheol Seong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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