Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface

Combining the mature technology of gallium nitride (GaN) with emerging materials such as van der Waals crystals is presently an important path in applied science research. Up to now, a broad spectrum of optoelectronic devices including light emitters, photodetectors, and solar cells based on mention...

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Veröffentlicht in:	ACS applied electronic materials 2022-10, Vol.4 (10), p.5017-5025
Hauptverfasser:	Zdanowicz, Ewelina, Herman, Artur P., Sobanska, Marta, Zytkiewicz, Zbigniew R., Olszewski, Wojciech, Hommel, Detlef, Kudrawiec, Robert
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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