Pronounced Optoelectronic Effect in n–n ReS 2 Homostructure

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS applied electronic materials 2022-09, Vol.4 (9), p.4306-4315
Hauptverfasser: Park, Sewon, Ha, Jisang, Khan, Muhammad Farooq, Im, Chaekwang, Park, Jae Young, Yoo, Sang Hyuk, Rehman, Malik Abdul, Kang, Keonwook, Lee, Soo Hyun, Jun, Seong Chan
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 4315
container_issue 9
container_start_page 4306
container_title ACS applied electronic materials
container_volume 4
creator Park, Sewon
Ha, Jisang
Khan, Muhammad Farooq
Im, Chaekwang
Park, Jae Young
Yoo, Sang Hyuk
Rehman, Malik Abdul
Kang, Keonwook
Lee, Soo Hyun
Jun, Seong Chan
description
doi_str_mv 10.1021/acsaelm.2c00567
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acsaelm_2c00567</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1021_acsaelm_2c00567</sourcerecordid><originalsourceid>FETCH-LOGICAL-c867-616942b503d40d61dfa36b5ae9eee6920664cddf4f6030ac2a308d0af94f1b983</originalsourceid><addsrcrecordid>eNpNj89Kw0AYxBdRsNSeve4LpP32T74mBw9SqhUKFe09bHa_hUiTLbvJwZvv4Bv6JKaYg6cZBmaGH2P3ApYCpFgZmwyd2qW0ADmur9hMolpnKIS6_udv2SKlD4CxIrXMxYw9vMbQhaGz5Pjh3Ac6ke3HqLF86_3oedPx7ufru-Nv9M4l34U2pD4Oth8i3bEbb06JFpPO2fFpe9zssv3h-WXzuM9sgZdnLLWsc1BOg0PhvFFY54ZKIsJSAqK2znntERQYK42CwoHxpfaiLgs1Z6u_WRtDSpF8dY5Na-JnJaC68FcTfzXxq19sNlA_</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Pronounced Optoelectronic Effect in n–n ReS 2 Homostructure</title><source>American Chemical Society Journals</source><creator>Park, Sewon ; Ha, Jisang ; Khan, Muhammad Farooq ; Im, Chaekwang ; Park, Jae Young ; Yoo, Sang Hyuk ; Rehman, Malik Abdul ; Kang, Keonwook ; Lee, Soo Hyun ; Jun, Seong Chan</creator><creatorcontrib>Park, Sewon ; Ha, Jisang ; Khan, Muhammad Farooq ; Im, Chaekwang ; Park, Jae Young ; Yoo, Sang Hyuk ; Rehman, Malik Abdul ; Kang, Keonwook ; Lee, Soo Hyun ; Jun, Seong Chan</creatorcontrib><identifier>ISSN: 2637-6113</identifier><identifier>EISSN: 2637-6113</identifier><identifier>DOI: 10.1021/acsaelm.2c00567</identifier><language>eng</language><ispartof>ACS applied electronic materials, 2022-09, Vol.4 (9), p.4306-4315</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c867-616942b503d40d61dfa36b5ae9eee6920664cddf4f6030ac2a308d0af94f1b983</citedby><cites>FETCH-LOGICAL-c867-616942b503d40d61dfa36b5ae9eee6920664cddf4f6030ac2a308d0af94f1b983</cites><orcidid>0000-0001-6986-8308 ; 0000-0001-9644-7955 ; 0000-0003-3768-6889 ; 0000-0002-8465-0662</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2765,27924,27925</link.rule.ids></links><search><creatorcontrib>Park, Sewon</creatorcontrib><creatorcontrib>Ha, Jisang</creatorcontrib><creatorcontrib>Khan, Muhammad Farooq</creatorcontrib><creatorcontrib>Im, Chaekwang</creatorcontrib><creatorcontrib>Park, Jae Young</creatorcontrib><creatorcontrib>Yoo, Sang Hyuk</creatorcontrib><creatorcontrib>Rehman, Malik Abdul</creatorcontrib><creatorcontrib>Kang, Keonwook</creatorcontrib><creatorcontrib>Lee, Soo Hyun</creatorcontrib><creatorcontrib>Jun, Seong Chan</creatorcontrib><title>Pronounced Optoelectronic Effect in n–n ReS 2 Homostructure</title><title>ACS applied electronic materials</title><issn>2637-6113</issn><issn>2637-6113</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNpNj89Kw0AYxBdRsNSeve4LpP32T74mBw9SqhUKFe09bHa_hUiTLbvJwZvv4Bv6JKaYg6cZBmaGH2P3ApYCpFgZmwyd2qW0ADmur9hMolpnKIS6_udv2SKlD4CxIrXMxYw9vMbQhaGz5Pjh3Ac6ke3HqLF86_3oedPx7ufru-Nv9M4l34U2pD4Oth8i3bEbb06JFpPO2fFpe9zssv3h-WXzuM9sgZdnLLWsc1BOg0PhvFFY54ZKIsJSAqK2znntERQYK42CwoHxpfaiLgs1Z6u_WRtDSpF8dY5Na-JnJaC68FcTfzXxq19sNlA_</recordid><startdate>20220927</startdate><enddate>20220927</enddate><creator>Park, Sewon</creator><creator>Ha, Jisang</creator><creator>Khan, Muhammad Farooq</creator><creator>Im, Chaekwang</creator><creator>Park, Jae Young</creator><creator>Yoo, Sang Hyuk</creator><creator>Rehman, Malik Abdul</creator><creator>Kang, Keonwook</creator><creator>Lee, Soo Hyun</creator><creator>Jun, Seong Chan</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-6986-8308</orcidid><orcidid>https://orcid.org/0000-0001-9644-7955</orcidid><orcidid>https://orcid.org/0000-0003-3768-6889</orcidid><orcidid>https://orcid.org/0000-0002-8465-0662</orcidid></search><sort><creationdate>20220927</creationdate><title>Pronounced Optoelectronic Effect in n–n ReS 2 Homostructure</title><author>Park, Sewon ; Ha, Jisang ; Khan, Muhammad Farooq ; Im, Chaekwang ; Park, Jae Young ; Yoo, Sang Hyuk ; Rehman, Malik Abdul ; Kang, Keonwook ; Lee, Soo Hyun ; Jun, Seong Chan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c867-616942b503d40d61dfa36b5ae9eee6920664cddf4f6030ac2a308d0af94f1b983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sewon</creatorcontrib><creatorcontrib>Ha, Jisang</creatorcontrib><creatorcontrib>Khan, Muhammad Farooq</creatorcontrib><creatorcontrib>Im, Chaekwang</creatorcontrib><creatorcontrib>Park, Jae Young</creatorcontrib><creatorcontrib>Yoo, Sang Hyuk</creatorcontrib><creatorcontrib>Rehman, Malik Abdul</creatorcontrib><creatorcontrib>Kang, Keonwook</creatorcontrib><creatorcontrib>Lee, Soo Hyun</creatorcontrib><creatorcontrib>Jun, Seong Chan</creatorcontrib><collection>CrossRef</collection><jtitle>ACS applied electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sewon</au><au>Ha, Jisang</au><au>Khan, Muhammad Farooq</au><au>Im, Chaekwang</au><au>Park, Jae Young</au><au>Yoo, Sang Hyuk</au><au>Rehman, Malik Abdul</au><au>Kang, Keonwook</au><au>Lee, Soo Hyun</au><au>Jun, Seong Chan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pronounced Optoelectronic Effect in n–n ReS 2 Homostructure</atitle><jtitle>ACS applied electronic materials</jtitle><date>2022-09-27</date><risdate>2022</risdate><volume>4</volume><issue>9</issue><spage>4306</spage><epage>4315</epage><pages>4306-4315</pages><issn>2637-6113</issn><eissn>2637-6113</eissn><doi>10.1021/acsaelm.2c00567</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-6986-8308</orcidid><orcidid>https://orcid.org/0000-0001-9644-7955</orcidid><orcidid>https://orcid.org/0000-0003-3768-6889</orcidid><orcidid>https://orcid.org/0000-0002-8465-0662</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 2637-6113
ispartof ACS applied electronic materials, 2022-09, Vol.4 (9), p.4306-4315
issn 2637-6113
2637-6113
language eng
recordid cdi_crossref_primary_10_1021_acsaelm_2c00567
source American Chemical Society Journals
title Pronounced Optoelectronic Effect in n–n ReS 2 Homostructure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T17%3A48%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Pronounced%20Optoelectronic%20Effect%20in%20n%E2%80%93n%20ReS%202%20Homostructure&rft.jtitle=ACS%20applied%20electronic%20materials&rft.au=Park,%20Sewon&rft.date=2022-09-27&rft.volume=4&rft.issue=9&rft.spage=4306&rft.epage=4315&rft.pages=4306-4315&rft.issn=2637-6113&rft.eissn=2637-6113&rft_id=info:doi/10.1021/acsaelm.2c00567&rft_dat=%3Ccrossref%3E10_1021_acsaelm_2c00567%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true