Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al 2 O 3 and Sub-5 nm ZnO Films

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al 2 O 3 and Sub-5 nm ZnO Films

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Veröffentlicht in:ACS applied electronic materials 2021-07, Vol.3 (7), p.3247-3255
Hauptverfasser: Lee, Hyun Jae, Moon, Taehwan, Kang, Sukin, Kim, Woohyun, Hwang, Cheol Seong
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container_issue 7
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container_title ACS applied electronic materials
container_volume 3
creator Lee, Hyun Jae
Moon, Taehwan
Kang, Sukin
Kim, Woohyun
Hwang, Cheol Seong
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doi_str_mv 10.1021/acsaelm.1c00410
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title Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al 2 O 3 and Sub-5 nm ZnO Films
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