Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors
Tungsten oxide (WO ) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO -doping in In O films is achieved by adjust...
Gespeichert in:
| Veröffentlicht in: | Nano letters 2024-05, Vol.24 (19), p.5737-5745 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 5745 |
|---|---|
| container_issue | 19 |
| container_start_page | 5737 |
| container_title | Nano letters |
| container_volume | 24 |
| creator | Yoo, Chanyoung Hartanto, Jonathan Saini, Balreen Tsai, Wilman Thampy, Vivek Niavol, Somayeh Saadat Meng, Andrew C McIntyre, Paul C |
| description | Tungsten oxide (WO
) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO
-doping in In
O
films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In
O
to In
O
stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (
) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized
for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices. |
| doi_str_mv | 10.1021/acs.nanolett.4c00746 |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acs_nanolett_4c00746</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>38686670</sourcerecordid><originalsourceid>FETCH-LOGICAL-c680-d63c97555bf48f15607082d0174f0ea14e410e82d13c823da3a5ecf4c227428b3</originalsourceid><addsrcrecordid>eNo9kF1LwzAUQIMobk7_gUj-QOfNZ9PHOacOCgMd-FjSNIFI25SkPuzfu7mPp3vPhXMfDkKPBOYEKHnWJs173YfWjuOcG4Ccyys0JYJBJouCXl92xSfoLqUfACiYgFs0YUoqKXOYIrsYQ-cNLvXORvxqh5D86EOPg8PfG8xw9hoG2-B1jyk-sAsRf9rW67q1WPcN_jK6_YeX1abMlqEb9OgPvI26Tz6NIaZ7dON0m-zDac7Q9m21XX5k5eZ9vVyUmZEKskYyU-RCiNpx5YiQkIOiDZCcO7CacMsJ2P2FMKMoazTTwhrHDaU5p6pmM8SPb00MKUXrqiH6TsddRaA6RKv20apztOoUba89HbXht-5sc5HOldgfy11prQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors</title><source>ACS Publications</source><creator>Yoo, Chanyoung ; Hartanto, Jonathan ; Saini, Balreen ; Tsai, Wilman ; Thampy, Vivek ; Niavol, Somayeh Saadat ; Meng, Andrew C ; McIntyre, Paul C</creator><creatorcontrib>Yoo, Chanyoung ; Hartanto, Jonathan ; Saini, Balreen ; Tsai, Wilman ; Thampy, Vivek ; Niavol, Somayeh Saadat ; Meng, Andrew C ; McIntyre, Paul C</creatorcontrib><description>Tungsten oxide (WO
) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO
-doping in In
O
films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In
O
to In
O
stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (
) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized
for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.4c00746</identifier><identifier>PMID: 38686670</identifier><language>eng</language><publisher>United States</publisher><ispartof>Nano letters, 2024-05, Vol.24 (19), p.5737-5745</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c680-d63c97555bf48f15607082d0174f0ea14e410e82d13c823da3a5ecf4c227428b3</cites><orcidid>0000-0002-0507-9200 ; 0000-0002-9259-2052 ; 0000-0002-3060-8928 ; 0000-0003-0050-2775 ; 0000-0002-7498-831X ; 0000-0002-6357-4103</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2752,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38686670$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoo, Chanyoung</creatorcontrib><creatorcontrib>Hartanto, Jonathan</creatorcontrib><creatorcontrib>Saini, Balreen</creatorcontrib><creatorcontrib>Tsai, Wilman</creatorcontrib><creatorcontrib>Thampy, Vivek</creatorcontrib><creatorcontrib>Niavol, Somayeh Saadat</creatorcontrib><creatorcontrib>Meng, Andrew C</creatorcontrib><creatorcontrib>McIntyre, Paul C</creatorcontrib><title>Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Tungsten oxide (WO
) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO
-doping in In
O
films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In
O
to In
O
stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (
) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized
for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.</description><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9kF1LwzAUQIMobk7_gUj-QOfNZ9PHOacOCgMd-FjSNIFI25SkPuzfu7mPp3vPhXMfDkKPBOYEKHnWJs173YfWjuOcG4Ccyys0JYJBJouCXl92xSfoLqUfACiYgFs0YUoqKXOYIrsYQ-cNLvXORvxqh5D86EOPg8PfG8xw9hoG2-B1jyk-sAsRf9rW67q1WPcN_jK6_YeX1abMlqEb9OgPvI26Tz6NIaZ7dON0m-zDac7Q9m21XX5k5eZ9vVyUmZEKskYyU-RCiNpx5YiQkIOiDZCcO7CacMsJ2P2FMKMoazTTwhrHDaU5p6pmM8SPb00MKUXrqiH6TsddRaA6RKv20apztOoUba89HbXht-5sc5HOldgfy11prQ</recordid><startdate>20240515</startdate><enddate>20240515</enddate><creator>Yoo, Chanyoung</creator><creator>Hartanto, Jonathan</creator><creator>Saini, Balreen</creator><creator>Tsai, Wilman</creator><creator>Thampy, Vivek</creator><creator>Niavol, Somayeh Saadat</creator><creator>Meng, Andrew C</creator><creator>McIntyre, Paul C</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0507-9200</orcidid><orcidid>https://orcid.org/0000-0002-9259-2052</orcidid><orcidid>https://orcid.org/0000-0002-3060-8928</orcidid><orcidid>https://orcid.org/0000-0003-0050-2775</orcidid><orcidid>https://orcid.org/0000-0002-7498-831X</orcidid><orcidid>https://orcid.org/0000-0002-6357-4103</orcidid></search><sort><creationdate>20240515</creationdate><title>Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors</title><author>Yoo, Chanyoung ; Hartanto, Jonathan ; Saini, Balreen ; Tsai, Wilman ; Thampy, Vivek ; Niavol, Somayeh Saadat ; Meng, Andrew C ; McIntyre, Paul C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c680-d63c97555bf48f15607082d0174f0ea14e410e82d13c823da3a5ecf4c227428b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoo, Chanyoung</creatorcontrib><creatorcontrib>Hartanto, Jonathan</creatorcontrib><creatorcontrib>Saini, Balreen</creatorcontrib><creatorcontrib>Tsai, Wilman</creatorcontrib><creatorcontrib>Thampy, Vivek</creatorcontrib><creatorcontrib>Niavol, Somayeh Saadat</creatorcontrib><creatorcontrib>Meng, Andrew C</creatorcontrib><creatorcontrib>McIntyre, Paul C</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoo, Chanyoung</au><au>Hartanto, Jonathan</au><au>Saini, Balreen</au><au>Tsai, Wilman</au><au>Thampy, Vivek</au><au>Niavol, Somayeh Saadat</au><au>Meng, Andrew C</au><au>McIntyre, Paul C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2024-05-15</date><risdate>2024</risdate><volume>24</volume><issue>19</issue><spage>5737</spage><epage>5745</epage><pages>5737-5745</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Tungsten oxide (WO
) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO
-doping in In
O
films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In
O
to In
O
stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (
) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized
for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.</abstract><cop>United States</cop><pmid>38686670</pmid><doi>10.1021/acs.nanolett.4c00746</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0507-9200</orcidid><orcidid>https://orcid.org/0000-0002-9259-2052</orcidid><orcidid>https://orcid.org/0000-0002-3060-8928</orcidid><orcidid>https://orcid.org/0000-0003-0050-2775</orcidid><orcidid>https://orcid.org/0000-0002-7498-831X</orcidid><orcidid>https://orcid.org/0000-0002-6357-4103</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1530-6984 |
| ispartof | Nano letters, 2024-05, Vol.24 (19), p.5737-5745 |
| issn | 1530-6984 1530-6992 |
| language | eng |
| recordid | cdi_crossref_primary_10_1021_acs_nanolett_4c00746 |
| source | ACS Publications |
| title | Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T21%3A28%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pubmed_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Atomic%20Layer%20Deposition%20of%20WO%203%20-Doped%20In%202%20O%203%20for%20Reliable%20and%20Scalable%20BEOL-Compatible%20Transistors&rft.jtitle=Nano%20letters&rft.au=Yoo,%20Chanyoung&rft.date=2024-05-15&rft.volume=24&rft.issue=19&rft.spage=5737&rft.epage=5745&rft.pages=5737-5745&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/acs.nanolett.4c00746&rft_dat=%3Cpubmed_cross%3E38686670%3C/pubmed_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/38686670&rfr_iscdi=true |