Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3
Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferro...
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| Veröffentlicht in: | Nano letters 2023-04, Vol.23 (7), p.3098-3105 |
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| container_title | Nano letters |
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| creator | He, Qinming Tang, Zhiyuan Dai, Minzhi Shan, Huili Yang, Hui Zhang, Yi Luo, Xin |
| description | Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In
Se
films by selenization of In
O
in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In
Se
with excellent crystalline quality. Electronic transport measurements of In
Se
highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In
Se
opens up potential applications of In
Se
in novel nanoelectronics. |
| doi_str_mv | 10.1021/acs.nanolett.2c04289 |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acs_nanolett_2c04289</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>36779554</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1194-6a851bd5d64be9cfe90188d4deb89381cd56552646dac0fd38d48a76e2ddc2023</originalsourceid><addsrcrecordid>eNo9kEtOwzAURS0EoqWwA4S8gRT_aw-r0pZIlRhQxpFjv0BQGld2UGFZbKRrIqif0bvSu-cODkL3lIwpYfTRujRubRsa6Loxc0QwbS7QkEpOMmUMuzxnLQboJqVPQojhklyjAVeTiZFSDFE-39ad_a5tg5cx7LoPHCq8svEd8DSCxetdyJ7qDbSpDm1fWkCMARpwXawd3v9meYsZfgXMb9FVZZsEd8c7Qm-L-Xr2nK1elvlsusocpUZkympJSy-9EiUYV4EhVGsvPJTacE2dl0pKpoTy1pHK8_6n7UQB894xwvgIicOuiyGlCFWxjfXGxp-CkuLfTNGbKU5miqOZHns4YNuvcgP-DJ1U8D_eeGLA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3</title><source>American Chemical Society Journals</source><creator>He, Qinming ; Tang, Zhiyuan ; Dai, Minzhi ; Shan, Huili ; Yang, Hui ; Zhang, Yi ; Luo, Xin</creator><creatorcontrib>He, Qinming ; Tang, Zhiyuan ; Dai, Minzhi ; Shan, Huili ; Yang, Hui ; Zhang, Yi ; Luo, Xin</creatorcontrib><description>Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In
Se
films by selenization of In
O
in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In
Se
with excellent crystalline quality. Electronic transport measurements of In
Se
highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In
Se
opens up potential applications of In
Se
in novel nanoelectronics.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.2c04289</identifier><identifier>PMID: 36779554</identifier><language>eng</language><publisher>United States</publisher><ispartof>Nano letters, 2023-04, Vol.23 (7), p.3098-3105</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1194-6a851bd5d64be9cfe90188d4deb89381cd56552646dac0fd38d48a76e2ddc2023</citedby><cites>FETCH-LOGICAL-c1194-6a851bd5d64be9cfe90188d4deb89381cd56552646dac0fd38d48a76e2ddc2023</cites><orcidid>0000-0002-7997-3934</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2751,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36779554$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>He, Qinming</creatorcontrib><creatorcontrib>Tang, Zhiyuan</creatorcontrib><creatorcontrib>Dai, Minzhi</creatorcontrib><creatorcontrib>Shan, Huili</creatorcontrib><creatorcontrib>Yang, Hui</creatorcontrib><creatorcontrib>Zhang, Yi</creatorcontrib><creatorcontrib>Luo, Xin</creatorcontrib><title>Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In
Se
films by selenization of In
O
in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In
Se
with excellent crystalline quality. Electronic transport measurements of In
Se
highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In
Se
opens up potential applications of In
Se
in novel nanoelectronics.</description><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9kEtOwzAURS0EoqWwA4S8gRT_aw-r0pZIlRhQxpFjv0BQGld2UGFZbKRrIqif0bvSu-cODkL3lIwpYfTRujRubRsa6Loxc0QwbS7QkEpOMmUMuzxnLQboJqVPQojhklyjAVeTiZFSDFE-39ad_a5tg5cx7LoPHCq8svEd8DSCxetdyJ7qDbSpDm1fWkCMARpwXawd3v9meYsZfgXMb9FVZZsEd8c7Qm-L-Xr2nK1elvlsusocpUZkympJSy-9EiUYV4EhVGsvPJTacE2dl0pKpoTy1pHK8_6n7UQB894xwvgIicOuiyGlCFWxjfXGxp-CkuLfTNGbKU5miqOZHns4YNuvcgP-DJ1U8D_eeGLA</recordid><startdate>20230412</startdate><enddate>20230412</enddate><creator>He, Qinming</creator><creator>Tang, Zhiyuan</creator><creator>Dai, Minzhi</creator><creator>Shan, Huili</creator><creator>Yang, Hui</creator><creator>Zhang, Yi</creator><creator>Luo, Xin</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-7997-3934</orcidid></search><sort><creationdate>20230412</creationdate><title>Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3</title><author>He, Qinming ; Tang, Zhiyuan ; Dai, Minzhi ; Shan, Huili ; Yang, Hui ; Zhang, Yi ; Luo, Xin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1194-6a851bd5d64be9cfe90188d4deb89381cd56552646dac0fd38d48a76e2ddc2023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>He, Qinming</creatorcontrib><creatorcontrib>Tang, Zhiyuan</creatorcontrib><creatorcontrib>Dai, Minzhi</creatorcontrib><creatorcontrib>Shan, Huili</creatorcontrib><creatorcontrib>Yang, Hui</creatorcontrib><creatorcontrib>Zhang, Yi</creatorcontrib><creatorcontrib>Luo, Xin</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>He, Qinming</au><au>Tang, Zhiyuan</au><au>Dai, Minzhi</au><au>Shan, Huili</au><au>Yang, Hui</au><au>Zhang, Yi</au><au>Luo, Xin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2023-04-12</date><risdate>2023</risdate><volume>23</volume><issue>7</issue><spage>3098</spage><epage>3105</epage><pages>3098-3105</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In
Se
films by selenization of In
O
in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In
Se
with excellent crystalline quality. Electronic transport measurements of In
Se
highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In
Se
opens up potential applications of In
Se
in novel nanoelectronics.</abstract><cop>United States</cop><pmid>36779554</pmid><doi>10.1021/acs.nanolett.2c04289</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-7997-3934</orcidid></addata></record> |
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| ispartof | Nano letters, 2023-04, Vol.23 (7), p.3098-3105 |
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| source | American Chemical Society Journals |
| title | Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3 |
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