The Graphene-Based Transistor with Dual Modifications through Electrostatic and Strain Effects

The Graphene-Based Transistor with Dual Modifications through Electrostatic and Strain Effects

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Veröffentlicht in:Journal of physical chemistry. C 2023-11, Vol.127 (47), p.23122-23127
Hauptverfasser: Ma, Xiaoqiao, He, Bin, Guo, Jinrui, Han, Jiale, Gao, Wenqi, Wang, Jiaqing, Han, Yue, Fang, Hong, Lü, Weiming
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container_end_page 23127
container_issue 47
container_start_page 23122
container_title Journal of physical chemistry. C
container_volume 127
creator Ma, Xiaoqiao
He, Bin
Guo, Jinrui
Han, Jiale
Gao, Wenqi
Wang, Jiaqing
Han, Yue
Fang, Hong
Lü, Weiming
description
doi_str_mv 10.1021/acs.jpcc.3c06674
format Article
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title The Graphene-Based Transistor with Dual Modifications through Electrostatic and Strain Effects
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