Charge Transport in 2D MoS 2 , WS 2 , and MoS 2 –WS 2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity

Charge Transport in 2D MoS 2 , WS 2 , and MoS 2 –WS 2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity

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Veröffentlicht in:Journal of physical chemistry. C 2020-10, Vol.124 (42), p.23368-23379
Hauptverfasser: Kaushik, Vishakha, Ahmad, Mujeeb, Agarwal, Khushboo, Varandani, Deepak, Belle, Branson D., Das, Pintu, Mehta, B. R.
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container_issue 42
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container_title Journal of physical chemistry. C
container_volume 124
creator Kaushik, Vishakha
Ahmad, Mujeeb
Agarwal, Khushboo
Varandani, Deepak
Belle, Branson D.
Das, Pintu
Mehta, B. R.
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doi_str_mv 10.1021/acs.jpcc.0c05651
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title Charge Transport in 2D MoS 2 , WS 2 , and MoS 2 –WS 2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity
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