Theoretical Insights into Two-Dimensional IV–V Compounds: Photocatalysts for the Overall Water Splitting and Nanoelectronic Applications

Two-dimensional (2D) materials have attracted enormous attention in many fields because of their appealing performances. In this contribution, we perform first-principles calculations on the photocatalytic properties of IV–V compounds, along with the design of a functional Schottky device based on a...

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Veröffentlicht in:Inorganic chemistry 2019-09, Vol.58 (18), p.12053-12068
Hauptverfasser: Gao, Xu, Shen, Yanqing, Ma, Yanyan, Wu, Shengyao, Zhou, Zhongxiang
Format: Artikel
Sprache:eng
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Zusammenfassung:Two-dimensional (2D) materials have attracted enormous attention in many fields because of their appealing performances. In this contribution, we perform first-principles calculations on the photocatalytic properties of IV–V compounds, along with the design of a functional Schottky device based on a graphene/SiAs van der Waals heterostructure (vdWH). Our results indicate that eight IV–V compound materials are all excellent photocatalysts for water-splitting reactions with high efficiency of visible light, with the conduction band minimum (CBM) and valence band maximum (VBM) both involving the corresponding band-gap region. It is examined whether a weak acid environment is beneficial for the hydrogen production process. Monolayer GeAs is characterized by an excellent absorption coefficient of up to 105–2 × 105 cm–1 in the visible region. The other nanostructures also have a considerable optical absorption as high as approximately half of 105 cm–1. These illustrate fascinating application prospectives for IV–V compounds in photocatalysis for water splitting under the irradiation of visible light, predicting tremendous significance in the fields of energy conversion and hydrogen production. The graphene/SiAs vdWH nanocomposite at the equilibrium state is featured for an n-type Schottky contact. External strain and electric-field applications are employed to practically present the transition for interface contact between the n- and p-type Schottky contacts or between the Schottky and ohmic contacts, which suggests appealing applications for the graphene/SiAs vdWH as a competitive candidate for functional Schottky devices and nanoelectronic materials.
ISSN:0020-1669
1520-510X
DOI:10.1021/acs.inorgchem.9b01255