Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides
Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem fro...
Gespeichert in:
Veröffentlicht in: | Chemistry of materials 2017-08, Vol.29 (16), p.6749-6757 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 6757 |
---|---|
container_issue | 16 |
container_start_page | 6749 |
container_title | Chemistry of materials |
container_volume | 29 |
creator | Schäfer, Tobias Konze, Philipp M Huyeng, Jonas D Deringer, Volker L Lesieur, Thibault Müller, Paul Morgenstern, Markus Dronskowski, Richard Wuttig, Matthias |
description | Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem from the chemical composition and “excess” vacancies that act like classical dopants. Here we show how both types of vacancies can be controlled independently in the solid solution Sn(Sb1–x Bi x )2Te4. We vary x in small steps over the entire compositional range and show that this has a profound effect on the material’s electronic nature: remarkably, we observe a change from p- to n-type conduction at x ≈ 0.7, solely controlled by composition. Our findings lead to a new compositionally (that is, chemically) tunable materials platform that enables precise control of electrical properties. |
doi_str_mv | 10.1021/acs.chemmater.7b01595 |
format | Article |
fullrecord | <record><control><sourceid>acs_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acs_chemmater_7b01595</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>b675285600</sourcerecordid><originalsourceid>FETCH-LOGICAL-a361t-8a44d1f553e7bd461cd163cadbb774900094172b8c39a226c695aa6ffde030393</originalsourceid><addsrcrecordid>eNqF0EFLwzAUwPEgCs7pRxDyBTpf2iZpjlLUDQYenOfymqRbRpuMpDvs29u54dVTDi-_x-NPyDODBYOcvaBOC72zw4CjjQvZAuOK35AZ4zlkHCC_JTOolMxKycU9eUhpD8AmWs2IrSfoNPZ0c_TOb2noaI0xOhvp5nSwFL2hdfDa-jHi6IKnzlOkyzCEPmzDMdEvO_1OvzCe0oh977yl9Q57HbbWO2PTI7nrsE_26frOyff726ZeZuvPj1X9us6wEGzMKixLwzrOCytbUwqmDROFRtO2UpYKAFTJZN5WulCY50ILxRFF1xkLBRSqmBN-2atjSCnarjlEN2A8NQyac6tmatX8tWqurSbHLu483odj9NOV_5gf6wBzEQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides</title><source>ACS Publications</source><creator>Schäfer, Tobias ; Konze, Philipp M ; Huyeng, Jonas D ; Deringer, Volker L ; Lesieur, Thibault ; Müller, Paul ; Morgenstern, Markus ; Dronskowski, Richard ; Wuttig, Matthias</creator><creatorcontrib>Schäfer, Tobias ; Konze, Philipp M ; Huyeng, Jonas D ; Deringer, Volker L ; Lesieur, Thibault ; Müller, Paul ; Morgenstern, Markus ; Dronskowski, Richard ; Wuttig, Matthias</creatorcontrib><description>Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem from the chemical composition and “excess” vacancies that act like classical dopants. Here we show how both types of vacancies can be controlled independently in the solid solution Sn(Sb1–x Bi x )2Te4. We vary x in small steps over the entire compositional range and show that this has a profound effect on the material’s electronic nature: remarkably, we observe a change from p- to n-type conduction at x ≈ 0.7, solely controlled by composition. Our findings lead to a new compositionally (that is, chemically) tunable materials platform that enables precise control of electrical properties.</description><identifier>ISSN: 0897-4756</identifier><identifier>EISSN: 1520-5002</identifier><identifier>DOI: 10.1021/acs.chemmater.7b01595</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>Chemistry of materials, 2017-08, Vol.29 (16), p.6749-6757</ispartof><rights>Copyright © 2017 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a361t-8a44d1f553e7bd461cd163cadbb774900094172b8c39a226c695aa6ffde030393</citedby><cites>FETCH-LOGICAL-a361t-8a44d1f553e7bd461cd163cadbb774900094172b8c39a226c695aa6ffde030393</cites><orcidid>0000-0003-1498-1025 ; 0000-0001-6873-0278 ; 0000-0002-1925-9624</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b01595$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.chemmater.7b01595$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,777,781,2752,27057,27905,27906,56719,56769</link.rule.ids></links><search><creatorcontrib>Schäfer, Tobias</creatorcontrib><creatorcontrib>Konze, Philipp M</creatorcontrib><creatorcontrib>Huyeng, Jonas D</creatorcontrib><creatorcontrib>Deringer, Volker L</creatorcontrib><creatorcontrib>Lesieur, Thibault</creatorcontrib><creatorcontrib>Müller, Paul</creatorcontrib><creatorcontrib>Morgenstern, Markus</creatorcontrib><creatorcontrib>Dronskowski, Richard</creatorcontrib><creatorcontrib>Wuttig, Matthias</creatorcontrib><title>Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides</title><title>Chemistry of materials</title><addtitle>Chem. Mater</addtitle><description>Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem from the chemical composition and “excess” vacancies that act like classical dopants. Here we show how both types of vacancies can be controlled independently in the solid solution Sn(Sb1–x Bi x )2Te4. We vary x in small steps over the entire compositional range and show that this has a profound effect on the material’s electronic nature: remarkably, we observe a change from p- to n-type conduction at x ≈ 0.7, solely controlled by composition. Our findings lead to a new compositionally (that is, chemically) tunable materials platform that enables precise control of electrical properties.</description><issn>0897-4756</issn><issn>1520-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqF0EFLwzAUwPEgCs7pRxDyBTpf2iZpjlLUDQYenOfymqRbRpuMpDvs29u54dVTDi-_x-NPyDODBYOcvaBOC72zw4CjjQvZAuOK35AZ4zlkHCC_JTOolMxKycU9eUhpD8AmWs2IrSfoNPZ0c_TOb2noaI0xOhvp5nSwFL2hdfDa-jHi6IKnzlOkyzCEPmzDMdEvO_1OvzCe0oh977yl9Q57HbbWO2PTI7nrsE_26frOyff726ZeZuvPj1X9us6wEGzMKixLwzrOCytbUwqmDROFRtO2UpYKAFTJZN5WulCY50ILxRFF1xkLBRSqmBN-2atjSCnarjlEN2A8NQyac6tmatX8tWqurSbHLu483odj9NOV_5gf6wBzEQ</recordid><startdate>20170822</startdate><enddate>20170822</enddate><creator>Schäfer, Tobias</creator><creator>Konze, Philipp M</creator><creator>Huyeng, Jonas D</creator><creator>Deringer, Volker L</creator><creator>Lesieur, Thibault</creator><creator>Müller, Paul</creator><creator>Morgenstern, Markus</creator><creator>Dronskowski, Richard</creator><creator>Wuttig, Matthias</creator><general>American Chemical Society</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-1498-1025</orcidid><orcidid>https://orcid.org/0000-0001-6873-0278</orcidid><orcidid>https://orcid.org/0000-0002-1925-9624</orcidid></search><sort><creationdate>20170822</creationdate><title>Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides</title><author>Schäfer, Tobias ; Konze, Philipp M ; Huyeng, Jonas D ; Deringer, Volker L ; Lesieur, Thibault ; Müller, Paul ; Morgenstern, Markus ; Dronskowski, Richard ; Wuttig, Matthias</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a361t-8a44d1f553e7bd461cd163cadbb774900094172b8c39a226c695aa6ffde030393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schäfer, Tobias</creatorcontrib><creatorcontrib>Konze, Philipp M</creatorcontrib><creatorcontrib>Huyeng, Jonas D</creatorcontrib><creatorcontrib>Deringer, Volker L</creatorcontrib><creatorcontrib>Lesieur, Thibault</creatorcontrib><creatorcontrib>Müller, Paul</creatorcontrib><creatorcontrib>Morgenstern, Markus</creatorcontrib><creatorcontrib>Dronskowski, Richard</creatorcontrib><creatorcontrib>Wuttig, Matthias</creatorcontrib><collection>CrossRef</collection><jtitle>Chemistry of materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schäfer, Tobias</au><au>Konze, Philipp M</au><au>Huyeng, Jonas D</au><au>Deringer, Volker L</au><au>Lesieur, Thibault</au><au>Müller, Paul</au><au>Morgenstern, Markus</au><au>Dronskowski, Richard</au><au>Wuttig, Matthias</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides</atitle><jtitle>Chemistry of materials</jtitle><addtitle>Chem. Mater</addtitle><date>2017-08-22</date><risdate>2017</risdate><volume>29</volume><issue>16</issue><spage>6749</spage><epage>6757</epage><pages>6749-6757</pages><issn>0897-4756</issn><eissn>1520-5002</eissn><abstract>Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem from the chemical composition and “excess” vacancies that act like classical dopants. Here we show how both types of vacancies can be controlled independently in the solid solution Sn(Sb1–x Bi x )2Te4. We vary x in small steps over the entire compositional range and show that this has a profound effect on the material’s electronic nature: remarkably, we observe a change from p- to n-type conduction at x ≈ 0.7, solely controlled by composition. Our findings lead to a new compositionally (that is, chemically) tunable materials platform that enables precise control of electrical properties.</abstract><pub>American Chemical Society</pub><doi>10.1021/acs.chemmater.7b01595</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-1498-1025</orcidid><orcidid>https://orcid.org/0000-0001-6873-0278</orcidid><orcidid>https://orcid.org/0000-0002-1925-9624</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0897-4756 |
ispartof | Chemistry of materials, 2017-08, Vol.29 (16), p.6749-6757 |
issn | 0897-4756 1520-5002 |
language | eng |
recordid | cdi_crossref_primary_10_1021_acs_chemmater_7b01595 |
source | ACS Publications |
title | Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T08%3A31%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Chemical%20Tuning%20of%20Carrier%20Type%20and%20Concentration%20in%20a%20Homologous%20Series%20of%20Crystalline%20Chalcogenides&rft.jtitle=Chemistry%20of%20materials&rft.au=Scha%CC%88fer,%20Tobias&rft.date=2017-08-22&rft.volume=29&rft.issue=16&rft.spage=6749&rft.epage=6757&rft.pages=6749-6757&rft.issn=0897-4756&rft.eissn=1520-5002&rft_id=info:doi/10.1021/acs.chemmater.7b01595&rft_dat=%3Cacs_cross%3Eb675285600%3C/acs_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |