Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides

Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem fro...

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Veröffentlicht in:Chemistry of materials 2017-08, Vol.29 (16), p.6749-6757
Hauptverfasser: Schäfer, Tobias, Konze, Philipp M, Huyeng, Jonas D, Deringer, Volker L, Lesieur, Thibault, Müller, Paul, Morgenstern, Markus, Dronskowski, Richard, Wuttig, Matthias
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container_end_page 6757
container_issue 16
container_start_page 6749
container_title Chemistry of materials
container_volume 29
creator Schäfer, Tobias
Konze, Philipp M
Huyeng, Jonas D
Deringer, Volker L
Lesieur, Thibault
Müller, Paul
Morgenstern, Markus
Dronskowski, Richard
Wuttig, Matthias
description Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem from the chemical composition and “excess” vacancies that act like classical dopants. Here we show how both types of vacancies can be controlled independently in the solid solution Sn­(Sb1–x Bi x )2Te4. We vary x in small steps over the entire compositional range and show that this has a profound effect on the material’s electronic nature: remarkably, we observe a change from p- to n-type conduction at x ≈ 0.7, solely controlled by composition. Our findings lead to a new compositionally (that is, chemically) tunable materials platform that enables precise control of electrical properties.
doi_str_mv 10.1021/acs.chemmater.7b01595
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title Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides
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