Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

The growth of single-layer graphene on Cu metal by chemical vapor deposition (CVD) is a versatile method for synthesizing high-quality, large-area graphene. It is known that high CVD temperatures, close to the Cu melting temperature (1083 °C), are effective for the growth of large graphene domains,...

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Veröffentlicht in:	Chemistry of materials 2015-08, Vol.27 (15), p.5377-5385
Hauptverfasser:	Ago, Hiroki, Ohta, Yujiro, Hibino, Hiroki, Yoshimura, Daisuke, Takizawa, Rina, Uchida, Yuki, Tsuji, Masaharu, Okajima, Toshihiro, Mitani, Hisashi, Mizuno, Seigi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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