Endotaxial Intergrowth of Copper Telluride in GeTe-Rich Germanium Antimony Tellurides Leads to High Thermoelectric Performance

In composite materials with nominal compositions Cu2Ge x Sb2Te x+4 (11 ≤ x ≤ 18, i.e., between Cu6.7Ge36.7Sb6.7Te50 and Cu4.5Ge40.9Sb4.5Te50), precipitates consisting of copper tellurides are endotaxially intergrown in a matrix of Cu-doped germanium antimony tellurides. The precipitates as well as t...

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Veröffentlicht in:	Chemistry of materials 2022-11, Vol.34 (22), p.10025-10039
Hauptverfasser:	Schwarzmüller, Stefan, Souchay, Daniel, Wagner, Gerald, Kemmesies, Paul, Günther, Daniel, Bittner, Michael, Zhang, Guanhua, Ren, Zefeng, Feldhoff, Armin, Snyder, G. Jeffrey, Oeckler, Oliver
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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