High-Efficiency Doping Outcomes in Homoepitaxial β-Ga 2 O 3 Films via Pulsed Si Doping with MOCVD

High-Efficiency Doping Outcomes in Homoepitaxial β-Ga 2 O 3 Films via Pulsed Si Doping with MOCVD

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Veröffentlicht in:Crystal growth & design 2024-10, Vol.24 (19), p.8101-8111
Hauptverfasser: Wang, Yao, Feng, Qian, Wu, Wenkai, Liu, Yuhong, Zhang, Yachao, Zhang, Jincheng, Hao, Yue
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container_end_page 8111
container_issue 19
container_start_page 8101
container_title Crystal growth & design
container_volume 24
creator Wang, Yao
Feng, Qian
Wu, Wenkai
Liu, Yuhong
Zhang, Yachao
Zhang, Jincheng
Hao, Yue
description
doi_str_mv 10.1021/acs.cgd.4c01049
format Article
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title High-Efficiency Doping Outcomes in Homoepitaxial β-Ga 2 O 3 Films via Pulsed Si Doping with MOCVD
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