Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core–Shell InGaN Nanowires

We report our recent observations of the growth temperature and source flux dependence of the light emission, In incorporation and quantum confinement of core–shell InGaN nanowires (NWs), self-formed in the growth temperature regime of In desorption by plasma-assisted molecular beam epitaxy on Si(11...

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Veröffentlicht in:	Crystal growth & design 2024-09, Vol.24 (18), p.7653-7661
Hauptverfasser:	Deng, Rongli, Pu, Xuan, Yang, Guanzhao, Zhang, Wenfeng, Lin, Haibin, Li, Junyong, Nötzel, Richard
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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