Correction to “Nucleation Window of Ga 2 O 3 and In 2 O 3 for Molecular Beam Epitaxy on (0001) Al 2 O 3 ”

Correction to “Nucleation Window of Ga 2 O 3 and In 2 O 3 for Molecular Beam Epitaxy on (0001) Al 2 O 3 ”

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Veröffentlicht in:Crystal growth & design 2023-11, Vol.23 (11), p.8468-8468
Hauptverfasser: Karg, Alexander, Bich, Justin A., Messow, Adrian, Schowalter, Marco, Figge, Stephan, Rosenauer, Andreas, Vogt, Patrick, Eickhoff, Martin
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container_end_page 8468
container_issue 11
container_start_page 8468
container_title Crystal growth & design
container_volume 23
creator Karg, Alexander
Bich, Justin A.
Messow, Adrian
Schowalter, Marco
Figge, Stephan
Rosenauer, Andreas
Vogt, Patrick
Eickhoff, Martin
description
doi_str_mv 10.1021/acs.cgd.3c01087
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title Correction to “Nucleation Window of Ga 2 O 3 and In 2 O 3 for Molecular Beam Epitaxy on (0001) Al 2 O 3 ”
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