Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A

Quantum dots that store large tensile strains represent an emerging research area. We combine experiments and computational modeling to investigate the self-assembly of Ge and GaAs tensile-strained quantum dots (TSQDs) on In0.52Al0.48As­(111)­A. Comparing these two nominally similar material systems...

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Veröffentlicht in:	Crystal growth & design 2021-03, Vol.21 (3), p.1674-1682
Hauptverfasser:	Sautter, Kathryn E, Schuck, Christopher F, Smith, Justin C, Vallejo, Kevin D, Garrett, Trent A, Soares, Jake, Coleman, Hunter J, Henry, Michael M, Jankowski, Eric, Ratsch, Christian, Simmonds, Paul J
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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