Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

We investigated and demonstrated a 1.3 μm band laser grown by metalorganic vapor-phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic-graded In x Ga1–x As buffer and epitaxial structure on a GaAs substrate. Bottom and upper cladding layers were built as a combination of AlInGaAs and...

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Veröffentlicht in:	Crystal growth & design 2021-04, Vol.21 (4), p.2068-2075
Hauptverfasser:	Mura, Enrica E, Gocalinska, Agnieszka M, O’Brien, Megan, Loi, Ruggero, Juska, Gediminas, Moroni, Stefano T, O’Callaghan, James, Arredondo, Miryam, Corbett, Brian, Pelucchi, Emanuele
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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