Effects of tilted Dirac cones and in-plane electric field on the valley-dependent magneto-optical absorption spectra in monolayer 8–Pmmn borophene

We investigate the optical absorption properties in a 8-Pmmn borophene monolayer with anisotropic tilted Dirac cones, subjected to a perpendicular magnetic field and in-plane dc electric field (EF). Numerical results for the magneto-optical absorption coefficient (MOAC) show that the tilt of the Dir...

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Veröffentlicht in:Physics letters. A 2023-01, Vol.457, p.128578, Article 128578
Hauptverfasser: Tho, Ta T., Hieu, Nguyen N., Quang, Doan M., Bau, Nguyen Q., Hoi, Bui D.
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Sprache:eng
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Zusammenfassung:We investigate the optical absorption properties in a 8-Pmmn borophene monolayer with anisotropic tilted Dirac cones, subjected to a perpendicular magnetic field and in-plane dc electric field (EF). Numerical results for the magneto-optical absorption coefficient (MOAC) show that the tilt of the Dirac cones causes the redshift of absorption peaks. More interestingly, there appears minor absorption peaks corresponding to the transitions between the Landau levels (LLs) n and n±2 beside the principal maxima corresponding to the transitions between LLs n and n±1. These minor peaks are absent in other two-dimensional Dirac materials with non-titled Dirac cones. The simultaneous presence of in-plane EF and the tilt parameter in 8–Pmmn borophene lifts the valley degeneracy in the LLs and causes the valley polarization in the MOAC, that do not occur in the absence of in-plane EF and/or the tilt parameter. The valley-polarized MOAC opens up potential applications in valleytronics. •There are optical transitions between next-nearest neighbor Landau levels in 8-Pmmn borophene.•The tilt parameter shifts the absorption peaks to lower photon energies.•The valley degeneracy remains in the absence of in-plane electric field and/or the tilt parameter.•The simultaneous presence of in-plane electric field and tilt parameter is necessary for achieving the valley polarization.•The valley-dependent absorption spectrum opens up potential application in valleytronic devices.
ISSN:0375-9601
1873-2429
DOI:10.1016/j.physleta.2022.128578