A rotating tower-like triboelectric nanogenerator for ultrahigh charge density breakthrough
In order to extract more electricity from triboelectric nanogenerator (TENG), improving charge density are key issues. Herein, a rotating tower-like triboelectric nanogenerator (RT-TENG) with an innovative circuit which combine discharge tube (DT) with voltage boost circuit (D-VBC) is proposed for u...
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Veröffentlicht in: | Nano energy 2023-04, Vol.108, p.108204, Article 108204 |
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Sprache: | eng |
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Zusammenfassung: | In order to extract more electricity from triboelectric nanogenerator (TENG), improving charge density are key issues. Herein, a rotating tower-like triboelectric nanogenerator (RT-TENG) with an innovative circuit which combine discharge tube (DT) with voltage boost circuit (D-VBC) is proposed for ultrahigh charge density breakthrough. This work designs a TENG that stacks multiple tower-like units to achieve charge compensation and systematically analysed the electromechanical coupling performance of blades. Moreover, D-VBC is established to highly improve the power and charge density. Combining the injection and storage of charge with the discharge effect, the surface charge density increases from 457 µC m−2 to 22 mC m−2(48-fold), and the average power density improves from 41 mW m−2 Hz−1 to 7300 mW m−2 Hz−1, which rapidly charge a 3.3 mF capacitor to 4.2 V within 50 s under the speed of 200 rpm. Furthermore, the power of RT-TENG with 4 tower-like units remains stable after 4 days continuous operation. Thus, this work provides a paradigm for improving the charge density and power of TENGs.
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•A rotating tower-like triboelectric nanogenerator with an innovative circuit which combine discharge tube with voltage boost circuit is proposed.•The electromechanical coupling performance of blades is systematically analysed.•This work designs a TENG that stacks multiple tower-like units to achieve charge compensation.•Combining the injection and storage of charge with the discharge effect, the surface charge density increases from 457 µC m-2 to 22 mC m-2(48-fold). |
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ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2023.108204 |