Mechanism of converting n-type to p-type conductivity in ZnO nanorods array films co-implanted with nitrogen and lithium ions

•Aqueous chemically grown ZnO NRs films were co-implanted with N and Li ions and annealed at 450 °C.•The p-type conductivity with a hole concentration as high as 8.97 × 1018 cm−3 and hole mobility of 0.92 cm2 V−1 s−1 has been noted.•The Lii–NO complex formation hinders compensation of Lii by LiZn and VZn acceptors, promoting p-type conductivity.•The study aids understanding the mechanism of stable p-type ZnO formation via dual acceptor co-implantation. Here, we report a stable p-type conductivity in aqueous chemically grown ZnO nanorods array films co-implanted with N and Li ions. We have successfully achieved p-type conductivity, attaining a hole concentration as high as 8.97 × 1018 cm−3 and a mobility of 0.92 cm2.V−1.s−1 by co-implanting N and Li ions at a fluence of 5 × 1014 ions/cm2 for each ion. X-ray photoelectron spectroscopy analysis reveals the formation of NO, LiZn acceptors, and Lii-NO complexes. Furthermore, room temperature photoluminescence and SRIM simulation results confirm the presence of VZn. The formation of Lii-NO complex helps LiZn, VZn, and NO acceptors to actively participate in p-type conduction process. A detailed photoluminescence and Raman spectroscopy analyses together with simulation results reveal that, as the co-implantation fluence increases, excess Lii and implantation-induced structural disorders are produced, resulting in a decrease in the hole concentration. Our study showcases the potential benefits of developing a stable p-type component in ZnO-based electronic devices.