Facile synthesis of Cu-Sn nanoparticle film and its bonding mechanism for power electronic packaging
The Cu-Sn full intermetallic compound is a promising high-temperature electronic packaging material, while its preparation is usually time-consuming. In this work, a novel dual-beam laser co-deposition method was proposed to prepare Cu-Sn nanoparticle film for power electronic packaging with high bo...
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Veröffentlicht in: | Journal of materials processing technology 2024-08, Vol.329, p.118438, Article 118438 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The Cu-Sn full intermetallic compound is a promising high-temperature electronic packaging material, while its preparation is usually time-consuming. In this work, a novel dual-beam laser co-deposition method was proposed to prepare Cu-Sn nanoparticle film for power electronic packaging with high bonding efficiency. Various Cu-Sn contents were prepared to reveal the bonding mechanism of the full intermetallic compound structure. The results show that joints with a Cu content ranging from 20 wt% to 80 wt% could form full intermetallic compounds within 2 min with the shear strength reaching 120 MPa. Specifically, Cu6Sn5, 'island-like' Cu3Sn, and sintered Cu generated successively in the bondline center with the increasing Cu content. All failures occurred within the bondline indicating a higher interface bonding quality, while the 'island-like' Cu3Sn enhanced the shear strength. This die attach process is compatible with current commercial SiC die attach process with lower material cost as well as high efficiency, enabling the Cu-Sn nanoparticle film to be a promising material for high-reliability power electronic packaging.
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•Cu-Sn nanoparticle films were prepared by dual-beam laser co-deposition method.•The as-deposited film consisted of Cu, Sn, Cu-Sn nanoalloy, Cu6Sn5 and Cu3Sn.•The full IMC joints can be prepared at 280 0C within 2 min.•The shear strength of the full IMC joint reached 120 MPa. |
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ISSN: | 0924-0136 |
DOI: | 10.1016/j.jmatprotec.2024.118438 |