Pulsed laser annealing for advanced technology nodes: Modeling and calibration

•A nanosecond laser annealing TCAD model is calibrated in Ge and SiGe.•Key process metrics for model calibration are extracted.•Key calibration parameters are species diffusion and optical properties.•Simulation of PMOS finFET laser annealing shows importance of process control. Pulsed laser annealing is one of the promising low thermal budget approaches to overcome process limitations and develop alternative schemes to achieve better device performance and enable 3D architectures. Its applications range from the Front End Of the Line (doping, contacts, strain engineering) to Back End Of the Line (Cu grain engineering) in logic and memory devices. One key enabler for integrating this disruptive technology in the coming highly challenging technology nodes is an accurate time-resolved modeling of laser matter interaction, thermal diffusion, phase change and species diffusion at the nanosecond timescale, all to be solved self-consistently. In this paper, we will present the TCAD simulation package of the laser annealing process (LASSE Innovation Application Booster or LIAB), with a specific focus on the phase field model and calibration of relevant materials. The coupled partial differential equation system is described and a methodology for materials calibration, especially challenging in the melting regime, is detailed with results shown for Ge and SiGe, with a application on a typical p-type finFET contact region anneal 2D use case.