Transient characteristics of the InGaP–GaAs–InGaAs–GaAs transistor laser

Transient characteristics of the InGaP–GaAs–InGaAs–GaAs transistor laser

Transient characteristics of the InGaP–GaAs–InGaAs (quantum well)-GaAs transistor laser are studied. Rate equations are numerically solved to obtain the response of current density and photon density. Expression of resonance frequency is obtained by solving the rate equations analytically. It has be...

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Veröffentlicht in:Optical and quantum electronics 2013-06, Vol.45 (6), p.543-547
Hauptverfasser: Habib, Md Ahsan, Ullah, Saeed Mahmud, Rafique, Shahida
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
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Zusammenfassung:Transient characteristics of the InGaP–GaAs–InGaAs (quantum well)-GaAs transistor laser are studied. Rate equations are numerically solved to obtain the response of current density and photon density. Expression of resonance frequency is obtained by solving the rate equations analytically. It has been found that the increases with decreasing spontaneous carrier lifetime and with increasing value of the bias current density.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-013-9680-6