Scaling behavior of dynamic hysteresis in multiferroic Bi5FeTi3O15 thin films

In this study, Bi 5 FeTi 3 O 15 (BFTO) thin films were obtained on silicon wafers using a sol–gel process. Advanced multiferroic properties, with a remnant polarization P r of ~ 28 µ C/cm 2 and a saturated magnetization M s of ~ 1.4 emu/cm 3 , were observed in a sample. The scaling of the dynamic ferroelectric hysteresis as a function of the magnitude E 0 and the frequency f of an applied electrical field was investigated. The scaling relationship of the P−E loops was found to take the form 〈 A 〉 ∝ f −0.19 E 0 4.47 at low E 0 and 〈 A 〉 ∝ f −0.05 E 0 1.26 at high E 0 . The exponents of the scaling that domain reversal in the BFTO thin films is insensitive to f at both low and high E 0 . This indicates the extensive potential applications of BFTO thin films in multi-state storage.