Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1−xP/GaAs structure

The structural, optical and morphological properties of Ga-rich Ga x In 1−x P layers with various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs substrates by using Molecular Beam Epitaxy technique are presented in this study. The Ga x In 1−x P/GaAs structures ( S1 , S2 and S3 ) have been evaluated by means of high resolution X-ray diffraction, photoluminescence (PL) and atomic force microscopy measurements at room temperature. Experimental forward and reverse bias current–voltage ( I – V ) characteristics of structure S3 was investigated at room temperature due to its better characteristics when compared to the other two samples. The main electrical parameters such as ideality factor ( n ), barrier height (Φ b ) and series resistance ( R s ) were extracted from forward bias I – V characteristics and Cheung’s function. In addition, Hall measurements were carried out as a function of temperature (30–300 K) and at a magnetic field of 0.4 T were presented for structure S3.