Molecular beam epitaxy of GaN on a substrate of MoS 2 layered compound
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Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 1999-07, Vol.69 (1), p.89-92 |
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container_title | Applied physics. A, Materials science & processing |
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creator | Yamada, A. Ho, K.P. Maruyama, T. Akimoto, K. |
description | |
doi_str_mv | 10.1007/s003390050976 |
format | Article |
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ispartof | Applied physics. A, Materials science & processing, 1999-07, Vol.69 (1), p.89-92 |
issn | 0947-8396 1432-0630 |
language | eng ; jpn |
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source | SpringerLink |
title | Molecular beam epitaxy of GaN on a substrate of MoS 2 layered compound |
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