TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS

This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the...

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Veröffentlicht in:	Journal of electronics (China) 1994-04, Vol.11 (2), p.104-115
1. Verfasser:	柯导明冯耀兰童勤义柯晓黎
Format:	Artikel
Sprache:	eng
Schlagworte:	characteristics circuits CMOS digital High integrated temperature transient
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container_title	Journal of electronics (China)
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creator	柯导明冯耀兰童勤义柯晓黎
description	This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.
doi_str_mv	10.1007/BF02778359
format	Article
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It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.</abstract><doi>10.1007/BF02778359</doi><tpages>12</tpages></addata></record>
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issn	0217-9822 1993-0615
language	eng
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source	Springer Nature - Complete Springer Journals; Alma/SFX Local Collection
subjects	characteristics circuits CMOS digital High integrated temperature transient
title	TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS
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