Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 1995-11, Vol.24 (11), p.1531-1534
Hauptverfasser:	NIEBUHR, R, BACHEM, K, DOMBROWSKI, K, MAIER, M, PLETSCHEN, W, KAUFMANN, U
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
Online-Zugang:	Volltext
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