Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers
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| Veröffentlicht in: | Journal of electronic materials 1995-11, Vol.24 (11), p.1531-1534 |
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| container_end_page | 1534 |
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| container_issue | 11 |
| container_start_page | 1531 |
| container_title | Journal of electronic materials |
| container_volume | 24 |
| creator | NIEBUHR, R BACHEM, K DOMBROWSKI, K MAIER, M PLETSCHEN, W KAUFMANN, U |
| description | |
| doi_str_mv | 10.1007/bf02676806 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1995-11, Vol.24 (11), p.1531-1534 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF02676806 |
| source | SpringerNature Journals |
| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
| title | Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers |
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