Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics
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| Veröffentlicht in: | Journal of electronic materials 1996-05, Vol.25 (4), p.709-713 |
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| container_end_page | 713 |
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| container_issue | 4 |
| container_start_page | 709 |
| container_title | Journal of electronic materials |
| container_volume | 25 |
| creator | STADLER, B. J. H VACCARO, K DAVIS, A RAMSEYER, G. O MARTIN, E. A DAUPLAISE, H. M THEODORE, L. M LORENZO, J. P |
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| doi_str_mv | 10.1007/bf02666528 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1996-05, Vol.25 (4), p.709-713 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF02666528 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v semiconductors Magnetooptical effects Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optical properties of specific thin films Physics |
| title | Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics |
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