Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing
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| Veröffentlicht in: | Journal of electronic materials 1995-10, Vol.24 (10), p.1413-1417 |
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| container_end_page | 1417 |
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| container_issue | 10 |
| container_start_page | 1413 |
| container_title | Journal of electronic materials |
| container_volume | 24 |
| creator | Kim, Youn Tae Jun, Chi Hoon Baek, Jong-Tae Yoo, Hyung Joun Chung, Sang-Koo |
| description | |
| doi_str_mv | 10.1007/BF02655457 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1995-10, Vol.24 (10), p.1413-1417 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF02655457 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Applied sciences Cold working, work hardening annealing, post-deformation annealing, quenching, tempering recovery, and crystallization Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Treatment of materials and its effects on microstructure and properties |
| title | Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing |
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