Molecular beam epitaxial growth and characterization of lead telluride for laser diodes
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| Veröffentlicht in: | Journal of electronic materials 1981-03, Vol.10 (2), p.313-325 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 325 |
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| container_issue | 2 |
| container_start_page | 313 |
| container_title | Journal of electronic materials |
| container_volume | 10 |
| creator | Partin, Dale L. |
| description | |
| doi_str_mv | 10.1007/BF02654796 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1981-03, Vol.10 (2), p.313-325 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF02654796 |
| source | SpringerLink Journals |
| title | Molecular beam epitaxial growth and characterization of lead telluride for laser diodes |
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