Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electronic materials 1990-10, Vol.19 (10), p.1061-1064
Hauptverfasser: SINGH, R, THAKUR, R. P. S, NELSON, A. J, GEBHARD, S. C, SWARTZLANDER, A. B
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1064
container_issue 10
container_start_page 1061
container_title Journal of electronic materials
container_volume 19
creator SINGH, R
THAKUR, R. P. S
NELSON, A. J
GEBHARD, S. C
SWARTZLANDER, A. B
description
doi_str_mv 10.1007/BF02651982
format Article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1007_BF02651982</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5409091</sourcerecordid><originalsourceid>FETCH-LOGICAL-c258t-5caac584a627aa2a4d2b1a90fefd6d870efc11bb3b78390316ded963567697e33</originalsourceid><addsrcrecordid>eNpFkD1PwzAURS0EEqWw8As8MABSwM-OHXuEigJSRQdAYote_NEGpU1kuyr8e4pAMN3hnnuHQ8gpsCtgrLq-nTKuJBjN98gIZCkK0Optn4yYUFBILuQhOUrpnTGQoGFEnmb9lualjyvsaLNxC59p6rvW0WGJyVM_tBk_2l25iP02L2kf6ASnnM7X9Lml5wBwQdOmSTli9umYHATskj_5zTF5nd69TB6K2fz-cXIzKyyXOhfSIlqpS1S8QuRYOt4AGhZ8cMrpivlgAZpGNJUWhglQzjujhFSVMpUXYkwuf35t7FOKPtRDbFcYP2tg9beJ-t_EDj77gQdMFrsQcW3b9LeQJTPMgPgC0R5btg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates</title><source>SpringerLink Journals - AutoHoldings</source><creator>SINGH, R ; THAKUR, R. P. S ; NELSON, A. J ; GEBHARD, S. C ; SWARTZLANDER, A. B</creator><creatorcontrib>SINGH, R ; THAKUR, R. P. S ; NELSON, A. J ; GEBHARD, S. C ; SWARTZLANDER, A. B</creatorcontrib><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/BF02651982</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of electronic materials, 1990-10, Vol.19 (10), p.1061-1064</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c258t-5caac584a627aa2a4d2b1a90fefd6d870efc11bb3b78390316ded963567697e33</citedby><cites>FETCH-LOGICAL-c258t-5caac584a627aa2a4d2b1a90fefd6d870efc11bb3b78390316ded963567697e33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5409091$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SINGH, R</creatorcontrib><creatorcontrib>THAKUR, R. P. S</creatorcontrib><creatorcontrib>NELSON, A. J</creatorcontrib><creatorcontrib>GEBHARD, S. C</creatorcontrib><creatorcontrib>SWARTZLANDER, A. B</creatorcontrib><title>Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates</title><title>Journal of electronic materials</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAURS0EEqWw8As8MABSwM-OHXuEigJSRQdAYote_NEGpU1kuyr8e4pAMN3hnnuHQ8gpsCtgrLq-nTKuJBjN98gIZCkK0Optn4yYUFBILuQhOUrpnTGQoGFEnmb9lualjyvsaLNxC59p6rvW0WGJyVM_tBk_2l25iP02L2kf6ASnnM7X9Lml5wBwQdOmSTli9umYHATskj_5zTF5nd69TB6K2fz-cXIzKyyXOhfSIlqpS1S8QuRYOt4AGhZ8cMrpivlgAZpGNJUWhglQzjujhFSVMpUXYkwuf35t7FOKPtRDbFcYP2tg9beJ-t_EDj77gQdMFrsQcW3b9LeQJTPMgPgC0R5btg</recordid><startdate>19901001</startdate><enddate>19901001</enddate><creator>SINGH, R</creator><creator>THAKUR, R. P. S</creator><creator>NELSON, A. J</creator><creator>GEBHARD, S. C</creator><creator>SWARTZLANDER, A. B</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19901001</creationdate><title>Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates</title><author>SINGH, R ; THAKUR, R. P. S ; NELSON, A. J ; GEBHARD, S. C ; SWARTZLANDER, A. B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c258t-5caac584a627aa2a4d2b1a90fefd6d870efc11bb3b78390316ded963567697e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SINGH, R</creatorcontrib><creatorcontrib>THAKUR, R. P. S</creatorcontrib><creatorcontrib>NELSON, A. J</creatorcontrib><creatorcontrib>GEBHARD, S. C</creatorcontrib><creatorcontrib>SWARTZLANDER, A. B</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SINGH, R</au><au>THAKUR, R. P. S</au><au>NELSON, A. J</au><au>GEBHARD, S. C</au><au>SWARTZLANDER, A. B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates</atitle><jtitle>Journal of electronic materials</jtitle><date>1990-10-01</date><risdate>1990</risdate><volume>19</volume><issue>10</issue><spage>1061</spage><epage>1064</epage><pages>1061-1064</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/BF02651982</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0361-5235
ispartof Journal of electronic materials, 1990-10, Vol.19 (10), p.1061-1064
issn 0361-5235
1543-186X
language eng
recordid cdi_crossref_primary_10_1007_BF02651982
source SpringerLink Journals - AutoHoldings
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Low thermal budget solid phase epitaxial growth of CaF2 On Si (111) substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T21%3A28%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20thermal%20budget%20solid%20phase%20epitaxial%20growth%20of%20CaF2%20On%20Si%20(111)%20substrates&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=SINGH,%20R&rft.date=1990-10-01&rft.volume=19&rft.issue=10&rft.spage=1061&rft.epage=1064&rft.pages=1061-1064&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/BF02651982&rft_dat=%3Cpascalfrancis_cross%3E5409091%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true